電子槍蒸鍍系統製程參數及修正板對膜厚均勻度之影響

Effects of Experimental Parameters and Correction Plate in E-beam System on the Film Thickness Uniformity

李俊雄(Chun-Hsiung Lee)

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2007年)

摘要

對於光學薄膜而言其光學特性受厚度均勻的影響非常敏感，尤其在大面積光學鍍膜中，厚度均勻性更顯得相當重要，在製鍍過程中如何使基板上之膜厚均勻分佈，而達成改善厚度分佈均勻之目標，將是本論文討論的重點。
論文研究的主題涵蓋以下：鍍5組多層膜，校正求出蒸鍍Ti3O5及SiO2之「平均蒸發時間」製程參數。首先不使用修正板來製鍍多層膜結構﹝膜堆厚度組合1.196(0.5LH0.5L)^9 1.56(0.5LH0.5L)^8﹞ 之濾光片，結果發現膜厚均勻度不佳。因此增加修正板來調整膜厚均勻度。修正板從Ti3O5及SiO2單層膜厚調校做起。實驗結果所獲得的膜厚誤差為2nm。接著製作多層膜濾光片，實驗結果顯示：針對穿透率T=50%的波長做比對(各種試片間最大值減最小值)：厚誤誤差 1.1 nm，450~600nm之 穿透最低值(Tmin)誤差為0.6%。最後獲得：平均蒸發時間製程參數Ti3O5為203 sec及SiO2為88sec時，並藉由調整修正板技術修補鍍膜均勻鍍，即可達到整體真空腔體膜厚均勻之濾光片特性。

並列摘要

It is very sensitive that its optics characteristic receives the influence even in thickness as to optics membrane, especially plate in the membrane in large area optics, the thickness homogeneity seems quite more important even more, how is it to make the membrane on the base plate distributed thick and even in the course of making and plating, and reach the thickness of improving and is distributed the even goal, it will be the focal point that a thesis will be discussed .

Theme of studying in thesis contains followingly : Plate 5 group multi-layer membrane, is it is it is it is it plate Ti3O5 and SiO2 ' evaporate time equally ' make parameter Cheng to steam to appear to ask to correct. Do not use revising the board to make and plate the multi-layer membrane structure film and pile the thickness and make 1.196 (0.5LH0.5L ) up at first ^ 9 1.56(0.5LH0.5L) ^ Straining the slide of 8, found the membrane not good in thick degree of consistency finally. So increase and revise the board to adjust the thick degree of consistency of membrane. Revise the board and transfer the school to do one thick from Ti3O5 and one story of membrane of SiO2 form. The thick error of membrane obtained of experimental result is 2nm. Then make multi-layer membrane and strain the slide, the experimental result shows: To piercing through rate T =Make wavelength of 50% than to (various kinds of try on during slice maximum last minimum): Thick to miss error 1.1 nm, to pierce through minimum value (Tmin ) error 0.6% 45000nm. Get finally: Average to evaporate time make parameter Cheng Ti3O5 203 sec and SiO2 at the 88sec , and by is it revise board technology is it plate membrane even to plate to mend to adjust, can reach the thick even straining the characteristic of the slide of a of body film of the whole vacuum .

參考文獻

3. Suk Tai Kang, Ryuichi Shimizu and Tsuyoshi Okutani, ”Sputtering of Si with KeV Ar+ Ions. 1. Measurement and Monte Carlo Calculations of Squttering Yield”, J.J.Appl.Phys., Vol.18,No.9,pp.1717-1725(1979).

4. Peter Sigmund, “Theory of Sputtering Yield of Amorphous and Poly-crystalline Targets”, Phys. Rev., V 184, PP.383-416(1969).

5. P. J.Martin, “Review Ion-Based methods for optical thin film deposition”, Journal of Materials Science, 21, pp.1-25(1986).

6. E. Franke, H. Neumann, M. Zeuner, W. Frank , F.Bigl, “Particle energy and angle distributions in ion beam sputtering”, Surface and Coatings Technology 97,pp.90-96(1997).

7. Michio Mizutani, Kimihiro Sasaki, and Tomonobu Hata, ”Investigation of Ion Beam Sputtering Process by Monte Carlo Simulation”, Electronics and Communications in Japan , Part2, Vol 81,No.12,pp.41-47(1998).