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  • 學位論文

以非真空製程製備銅銦鎵硫[Cu(InGa)S2]薄膜於太陽能電池吸收層之應用

Preparation of Cu(InGa)S2 Absorber Thin Films by Non-vacuum Processes for Solar Cells Application

指導教授 : 楊立中
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摘要


本實驗利用非真空製程製備銅銦鎵硫(Cu(InGa)S2,CIGS)光伏元件之吸收層。其製程是利用球磨法來製備CIGS前驅物之漿料(Ink),並以旋轉塗佈法(Spin Coating)將其漿料塗佈於基板上,使其形成CIGS前驅層之薄膜,再藉由紅外線快速升溫爐(RTA)對薄膜進行熱處理,使CIGS薄膜具有黃銅礦(Chalcopyrite)結構。 前驅物的製備是由CuS、In2S3、Ga2S3三種化合物調整其比例所混和形成,以Cu/In+Ga比製備出Cu-poor 和Cu-rich兩種類型,再以不添加有毒氣體及危害環境之溶劑為條件下製備CIGS薄膜。 利用能量散佈光譜儀(EDS)、感應耦合電漿質譜儀(ICP-MS)、掃描式電子顯微鏡(SEM)、X光繞射(XRD)、紫外光-可見光光譜儀(UV-Vis)及螢光激發光譜儀(PL)等進行檢測分析。 由本實驗結果得知,CIGS薄膜之黃銅礦結構特徵峰,會隨著熱處理溫度的增加,銅含量會上升,半高寬會變窄,晶粒隨之變大,在熱處理溫度700oC、持溫10分鐘時,得到的具有面黃銅礦結構之CIGS薄膜為最佳。

並列摘要


This experiment used photovoltaic devices of non-vacuum process preparation of copper indium gallium sulfur (Cu(InGa)S2,CIGS) absorber layer. CIGS ink was prepared using wet- ball milling, and then the ink is deposited on substrate to form a precursor layer by spin coating. The precursor layer was then made to reach with heat treatment to form the chalcopyrite structure. The ink consisted of three binary compound powers, CuS, In2S3 and Ga2S3. By adjusting the ratio of different powders, we can obtain a Cu-poor and a Cu-rich type with CIGS thin film by rapid thermal process without toxic atmosphere and endanger the environment solvent. CIGS thin film was characterized by XRD, SEM, EDS, ICP-MS, UV-Vis and PL. From the experimental results found that as temperature increasing, the grain size will grow. Thermal annealing for 10 min at 700 oC was performed by RTP. The mean crystallite size, calculated from the full width at half maximum of the (112) diffraction peak, increases with the copper concentration. Band gap was increases with the copper content. Based on the analysis results of this experiment, CIGS thin film with chalcopyrite structure can be obtained by heating at 700 oC for 10 min.

並列關鍵字

Cu(InGa)S2 Solar Cell Ball Milling Precursor Chalcopyrite

參考文獻


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