本論文主要利用氣液固相法(Vapor-Liquid-Solid)成長混成矽奈米材料(Hybrid Silicon Nano-materials, HSNMs),應用於薄膜式太陽能電池之吸收層。利用濺鍍機沈積之Au做為催化劑,並且使用SiH4/N2/H2氣體當作矽的來源,於低壓化學氣相沉積爐管內藉由調整不同SiH4/ N2/H2氣體流量的比例與成長的時間,得到高品質的混成矽奈米材料。 為了增加矽奈材料太陽能電池之效率,藉由(1)改變電極材料(2)改變本質矽吸收層厚度(3)本質矽吸收層氫化處理與否(4)改變矽奈米材料吸收層厚度(5)矽奈米材料吸收層氫化處理與否等等調查,了解這些因素對太陽能電池之特性影響。根據實驗結果發現混成矽奈米材料的密度與尺寸大小會隨著SiH4氣體流量的增強而增強,通入不同比例的N2或H2也會改變其外貌與特性,從掃描式電子顯微鏡觀察發現混成矽奈米材料的直徑約為數百奈米至4微米、長度約為1至70微米,使用濺度沈積之鋁電極比銀膠製程形成之銀電極較佳,本質矽吸收層厚度約為500nm且矽奈米材料吸收層成長時間5分鐘為最佳,氫化處理有助於增進本質矽吸收層及矽奈米材料吸收層特性。經由這些最佳化所做成的Al/n+-HSNM/i-HSNM/i-poly-Si/p+-poly-Si太陽能電池其效率可達到1.96%。
In this thesis, the synthesized hybrid silicon nanomaterials (HSNMs) as the absorber layer of the thin-film solar cells have been developed by means of the vapor-liquid-solid (VLS) method. The HSNMs have been demonstrated using gold as the mediating catalyst and silane as the Si source ambient. The high quality HSNMs can be achieved by tuning the flow rate of the SiH4/N2/H2 and the time of the deposition. To increase the efficiency of the solar cell, the effects of the various processes on the solar cell were adopted and investigated, including (1) various gate electrodes (2) various thickness of the intrinsic silicon layer (3) the intrinsic silicon layer with and without hydrogen treatment (4) various thickness of the HSNMs (5) the HSNMs with and without hydrogen treatment. The results display that the densities and sizes of the HSNMs increase with increasing the thickness of the SiH4 gas flow. The morphology of the HSNMs can be affected by the flow ratio of nitrogen and hydrogen. Scanning electron microscopy image displays that the HSNMs with a diameter of several hundreds nanometer to 4 micrometer and a length of ~1-70 ?m were obtained. The Al gate electrode formed by sputter is better than that Ag gate electrode formed by printing. The optimum thickness of the intrinsic polysilicon layer and the HSNMs are around 50 nm and 5 min, respectively. The hydrogen treatment is helped for the characteristics of the intrinsic polysilicon layer and the HSNMs. According to the optimization of these process conditions, the efficiency of the Al/n+-HSNM/i-HSNM/i-poly-Si/p+-poly-Si structured thin-film solar cell can be achieved around 1.96%.