As the scaling of the CMOS technology advances aggressively, the Random Telegraph Noise (RTN) becomes an important reliability issue.[1] Since RTN is a stochastic fluctuation between two levels of either the device drain current (ID) or threshold voltage (Vt) induced by trapping/de-trapping of a single charge in a gate trap. In this work, we demonstrate a method to extract RTN trap position both in vertical direction (channel surface to gate electrode) and lateral direction (source to drain). Therefore, the traps in gate dielectric can be profiled. Finally, we extract RTN trap energy at zero electric field condition (ET0) in vertical direction.