四道光干涉微影之曝光與顯影參數對 微結構輪廓及深度之探討

The influences of exposure and development parameters on the shape and depth of micro-structure for four-beam interferometric lithography

黃家麒(Cha-Chi Huang)

指導教授 ： 陳志臣

國立中央大學/工學院/機械工程學系/碩士(2006年)

摘要

摘要
雷射干涉微影(Laser Interference Lithography)只須簡單的光學鏡組及雷射光源，且不須通過光罩，便可由此系統得到一維條紋及二維點陣或洞陣的週期性結構。此系統的優點在於擁有極大的聚焦深度、易於大面積曝光、低成本、高解析度。
四道光單曝光除了有干涉微影的優點外，更有著高產能、高對比度、以及易形成深孔等優勢。因此，本研究將建立四道光單曝光強度分佈之數學模型並進行相關實驗，由實驗結果分析得知，在相同曝光與顯影參數下，四道光單曝光將會使光強重新分配，使得其所得到的微結構比兩道光雙曝光之結構更為尖銳(sharper)。
另外，隨著曝光時間與顯影時間的增加，結構的特徵尺寸將會縮小，高度上亦將有所變化。本研究在適當的曝光與顯影參數下，利用ICP乾蝕刻成功地在矽基板上得到四道光單曝光所建構出的二維週期性陣列結構。

關鍵字

雷射干涉微影 ； 四道光曝光

並列摘要

Abstract
In this research, we have developed laser interference lithography system, such as one dimension linear gratings or two dimension arrays of dots and grids, to create periodical structures. The method of maskless laser interference lithography used for generation of infinite depth of focus, relative simplicity, low cost, deep sub-micron patterns and high resolution in large field of view is investigated.
The main advantage of four-beam exposure is that higher throughput process for patterning arrays and higher contrast images can be obtained. According to theoretical analysis and experimental results, four-beam exposure allows a greater percentage of the incident energy to be redistributed near the intensity maxima and generates structures sharper.
The effects of the process parameters on the shape and depth of the structure have been discussed. According to different critical dimension, this thesis also suggests several parameters for exposure and development, with which best pattern had been acquired in our experiments.

並列關鍵字

four-beam exposure ； laser interference lithography

參考文獻

[63] Ngoc Diep Lai, Wen Ping Liang, Jian Hung Lin, Chia Chen Hsu, and Cheng Hsiung Lin,” Fabrication of two- and three-dimensional periodic structures by multi-exposure of twobeam interference technique”, OPTICS EXPRESS, 13, 23

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