氧化對覆蓋式化學氣相沉積法 石墨烯之影響

對於生長大晶粒石墨烯而言，降低石墨烯成核密度是必要的。本論文發表一種簡單且有效的化學氣相沉積法來達到極低的成核密度，利用氧化銅箔再覆蓋石英板於銅箔上，將成核密度，降低了三個數量級，並且生長出1.15微米晶粒的石墨烯。本論文並探討氧化銅箔將低成核密度之主因，發現兩個原因，第一、氧化銅箔的影響，必須於無氫退火環境下，有氫環境下，會將銅箔表面氧化物還原。第二、氧化銅主要貢獻為改變銅箔之形貌。另外，也證實覆蓋法在氧化銅箔也能有效降低銅箔粗糙度，更進一步降低成核密度。藉由這些發現，我們能藉由控制氧化銅程度來控制化學氣相沉積法之石墨烯形貌，此方法將開闢生長大單晶石墨烯一條新的方向。

關鍵字

晶粒密度；覆蓋式；氧化銅；石墨烯

並列摘要

Reducing the grain density is required to produce ultra-large scale single crystalline graphene for electronics applications. We here report that ultralow nucleation densities can be achieved through growth in an oxidized enclosure. Compared to the traditional growth process, graphene grain densities are reduced by 3 orders of magnitude and grain sizes up to 1.15mm can be achieved. Investigation into the reason for this improvement reveals two important effects. First, copper oxide has to be present during growth which requires hydrogen-free annealing. Second, the main contribution of the copper oxide is to change the morphology of the catalyst. In addition, we confirmed that the enclosure method could reduce the copper roughness at the oxidized copper, further reduced the nucleation density.These results open up a new direction towards the growth of single-crystalline graphene.

並列關鍵字

enclosure ； oxidation copper ； graphene ； grain density

參考文獻

1 Novoselov, K. S. et al. Electric Field Effect in Atomically Thin Carbon Films. Science 306, 666-669, (2004).

2 Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197-200, (2005).

3 Zhang, Y., Tan, Y.-W., Stormer, H. L. & Kim, P. Experimental observation of the quantum Hall effect and Berry's phase in graphene. Nature 438, 201-204, (2005).

4 Geim, A. K. & Novoselov, K. S. The rise of graphene. Nat Mater 6, 183-191, (2007).

5 Lee, S.-K. et al. All Graphene-Based Thin Film Transistors on Flexible Plastic Substrates. Nano Letters 12, 3472-3476, (2012).

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氧化對覆蓋式化學氣相沉積法石墨烯之影響

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