銅釔氧化物薄膜之製備及性質研究

The study on the preparation and properties of CuYO2 films

陳盈廷(Ying-Ting Chen)

指導教授 ： 陳國駒

義守大學/理工學院/材料科學與工程學系/碩士(2017年)

摘要

本實驗利用射頻磁控濺鍍系統於石英玻璃基板沉積銅釔氧化物薄膜。藉由改變退火條件、靶材Ca摻雜量(0at%、3at%、6at%、9at%)以及Sr摻雜量(0at%、3at%、6at%、9at%)，探討其對銅釔氧化物薄膜之性質影響。
實驗結果顯示，必須使用快速熱退火(RTA)，溫度為 900°C，退火氣氛為氮氣環境下，才能使薄膜主相為CuYO2的相。然而溫度低於 900°C的話， 薄膜主相會開始轉變為 Cu2Y2O5與Y2O3。
CuYO2薄膜其可見光區平均穿透率為57.3%，光學能隙達3.43eV，電阻率為1.29×10的7次方Ω-cm，載子移動率為0.71cm2/V·s，載子濃度為1.53×1012cm-3。
Cu-Y-O:Ca/ITO薄膜PN接面的啟動電壓約4.77V;崩潰電壓為7.67V， 平均可見光穿透率 65.07%，由於PN界面清晰，薄膜表面平整及致密，減少元件之漏電流而呈現出理想整流效果。
0at%的Cu-Y-O薄膜/ITO 薄膜的 PN 界面為結晶性最佳，經由整流關係式計算後，其理想因子為 1.00048。

關鍵字

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並列摘要

In this experiment, the Cuprous Yttrium oxide (Cu-Y-O) films were deposited on quartz glass substrates by RF magnetron sputtering. The doping effects on the properties of Cu-Y-O thin films by various annealing conditions, co-doping level of Ca or Sr ranging from 0 to 9at% were investigated.
The experimental results show that rapid annealing(RTA) at 900°C and undernitrogenatmospherecangetthemainphaseofthefilmbeCuYO2 phase. However, when the temperature is lower than 900°C, the main phase of the film will change to Cu2Y2O5 and Y2O3.
The CuYO2 films has transmittance of 57.3%, band gap energy of 3.43eV, optimal resistivity of 1.29×107Ω-cm, carrier mobility of 0.71cm2/V·s and carrier concentration of 1.53×1012cm-3.
The Cu-Y-O:Ca/ITO films of the turn on voltage is 4.77V, the breakdown voltage is 7.67V and the average visible transmittance is 65.07%. Due to the clear interface of the PN, the surface of the films were smooth and compact and the leakage current of the device is reduced. Out of the ideal rectification effect.
The PN interface of Cu-Y-O/ITO films with 0at% is the best crystallinity. Due to its ideal value is 1.00048.

並列關鍵字

none

參考文獻

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