不同雷射切割條件下矽晶圓之強度研究

Strength of Silicon Wafer under Different Laser Cutting Conditions

戴于翔(Yu-Siang Dai)

指導教授 ： 吳士傑

義守大學/理工學院/機械與自動化工程學系/碩士(2019年)

摘要

半導體封裝產業依照材料特性的不同有許多切割方式，矽晶圓使用雷射切割其原因不外乎在加工過程中存在許多優勢，在無接觸加工的條件下，雷射光束的能量及其移動速度可以依照材料彈性調整雷射參數，針對多種金屬、非金屬進行加工，特別是可以加工高硬度、高脆性、及高熔點的材料，並且在雷射加工的過程當中並不會產生刀具磨損增加成本。雷射加工其無切削力作用於工件上的特性，更可以增加良率以及穩定性。本研究將探討在不同參數設定條件下的飛秒(FemtoSecond)雷射切割對於矽晶圓強度之影響，透過觀察側壁之表面粗度(Surface Roughness)以及不同強度測試方案如:三點抗折測試(Three-Point Bending Test)下的結果推測其成因，並以現有的實驗規範下提出測試機台改良修正之方案。

關鍵字

飛秒雷射 ； 表面粗度 ； 三點抗折測試

並列摘要

There are many cutting methods depending on the material characteristics. The reason for semi-conductor industry is that there are many advantages in the cutting process. Under the condition of non-contact processing,the energy of the laser beam and its moving speed Laser parameters can be adjusted according to material properties, and can be processed for a variety of metals and non-metals, especially for materials with high hardness, high brittleness, and high melting point, and no tool wear and increase cost during laser processing. Laser processing of its non-cutting force on the workpiece can increase the yield and stability. This study will explore the effect of ultrafast laser cutting on the strength of the wafer under different parameter settings, by observing the surface roughness of the sidewall and the different bending strength test schemes such as: Cantilever Beam The results of the Bending Test and the Three-Point Bending Test are presumed to be the cause of the test, and the improvement plan of the test machine is proposed under the existing experimental specifications.

並列關鍵字

FemtoSecond laser ； surface roughness ； Three-Point Bending Test

參考文獻

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