以高退火點玻璃披覆於氧化鋁基板及其玻璃熱性質之研究

High Annealing Point Glass Layers on Alumina Substrate and the Thermal Properties of the Glasses

賴孝杰(Siao-Jie Lai)

指導教授 ： 徐錦志

大同大學/工程學院/材料工程學系所/碩士(2009年)

摘要

近年來能源消耗速度越來越嚴重，綠色能源成為目前的熱門話題。其中吸收太陽能轉換成電的太陽能電池持續被研究，以改善效率和降低成本。目前是以矽太陽能電池為市場主流，多晶矽薄膜製程中，為了可製造大面積的太陽能電池且降低對矽晶的依賴，非矽基板(異質基板)的發展則變的相當重要。為了獲得高品質的多晶矽薄膜，可在基板表面披覆中間層，以調整熱膨脹係數的差異，並改善Al2O3基板的平坦度，應用於沉積多晶矽薄膜太陽能電池。
研究發現m=20、15 和 A2S2L6三種玻璃擁有適當的熱膨脹係數(介於Al2O3 (CTE:8.0X10-6/oC)與矽鍍層 (2.9~3.6X10-6/oC , 20~1200oC))，高退火溫度(>800oC)，及低的攤覆溫度(<1500oC)和良好的玻璃平坦層平坦度 (Rms<0.5nm)，推測應可做為Al2O3與矽鍍層間的玻璃中間層。

關鍵字

異質基板 ； 高退火點玻璃

並列摘要

The speed of the energy consumption is much fast than before in recent year and the green energy becomes the popular issue at present. And because of improving the efficiency and decreasing the cost, the research, absorbing the solar energy to change into the solar cell, is in progress. Now the silicon solar cell is the main trend on the market. In the process of producing polycrystall silicon thin film, the development of non-silicon substrate (foreign substrate) becomes much important for producing the solar cell of the wide area and declines the dependence of the silicon. For getting the polycrystall silicon thin film of the high-quality to adjust the difference between the thermal expansion coefficients, the surface of the substrate is covered with the interlayer. And for improving the smooth level of the alumina substrate, it is applied to deposit the solar cell of the polycrystall silicon thin film.
The research shows that the glasses of m=20,15 ,and A2S2L6 have appropriate thermal expansion coefficient (it’s between alumina substrate (CTE:8.0X10-6/oC) and silicon deposition layer(2.9~3.6X10-6/oC, 20~1200oC)), higher anneal temperature(>800oC), lower stall temperature(<1500oC),and the smooth level of the great smooth layer(Rms<0.5nm), guessing that may be made the interlayer of the glass between the alumina substrate and the silicon deposition layer.

並列關鍵字

foreign substrate ； high annealing point glass

參考文獻

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