本論文以釕(Ru)靶材使用DC磁控共濺鍍5 nm Ru-B薄膜做為擴散阻障層,接續進行快速退火爐(RTA)30分鐘Ar+H2(5%)氣氛溫度200℃~750℃熱處理,後續分析藉由四點探針(FPP)、X光繞射分析儀(XRD)、掃描式電子顯微鏡(SEM)、歐傑電子能譜儀(AES)、穿透式電子顯微鏡(TEM)等分析薄膜特性。結果顯示,Cu/Ru61.3B38.6/Si薄膜結構有很好的失效溫度640℃,失效的機制在於Cu原子穿過結晶化的擴散阻障層與矽基板反應生Cu3Si。 而共濺鍍5 nm二元Ta-B及三元Ru-Ta-B的擴散阻障層顯示,三元Ru-Ta-B阻障層有較二元Ta-B阻障層有較好的熱穩定性及失效溫度,其中 Ru85.89Ta4.14B9.88薄膜有最佳的失效溫度630℃。針對雙層阻障層濺鍍製備Cu/Ru(2 nm)/B-Ta(3 nm)/Si結構的阻障層,結果顯示,Cu/Ru/Ta48.1B51.8/Si薄膜結構失效溫度達640℃,比三元Ru85.89Ta4.14B9.88薄膜有更高的失效溫度。
Thin films were deposited on Si substrates by magnetron sputtering. 5 nm Ru-B, Ta-B and Ru-Ta-B were prepared on the Si substrate as diffusion barrier, and then the Cu/barrier/Si scheme was annealed in Ar+H2 (5%) and at a temperature between 200℃ and 750℃. The properties of the films were analyzed by four-point probe (FPP), x-ray diffraction (XRD), scanning electron microscopy (SEM), Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). The result show that Cu/Ru61.3B38.6/Si has a failure temperature of 640℃, and the failure is resulted from Cu has penetrated through diffusion barrier to form Cu3Si with Si substrate. The results also showed that Ru-Ta-B is superior to Ta-B as a barrier, and Ru85.89Ta4.14B9.88 has a failure temperature of 630℃. Bi-layer Ru (2 nm)/B-Ta (3 nm) barrier. The result showed Cu/ Ru/Ta48.1B51.8/Si thin film has a failure temperature of 640℃, which is higher than that of Ru85.89Ta4.14B9.88.