氧化鋅(ZnO),是近年來在各領域熱門的研究的材料之一,本論文透過反應性磁控射頻濺鍍系統,在室溫的成長條件下,沉積在市售之ITO/PET基板上製備氧化鋅薄膜,並且結合簡易的加工完成壓電換能器元件;透過X光繞射實驗可得知製備的氧化鋅具有C軸(002)的從優取向,在FE-SEM的量測之下得知薄膜厚度,並推算薄膜沉積速度為150nm/HR,在改變不同厚度的元件製程參數之下,使用一變頻定外力施壓源,觀察其元件在低頻上的特性,以方便後續在低頻環境中收集壓力轉換成電能以便利用。 製作完成的壓電換能元件約為2.5cm2,壓電層厚度在2.4μm以上的元件,在頻率1HZ、進氣氣壓為6kg/ cm2,元件開路壓電電壓平均都有1.5V以上,已可讓市售LED燈發亮,在電能儲存的部分,壓電層厚度在4μm以上的元件,透過使用市售鈕扣型Ni-MH充電電池,電容量為40mAH、以脈衝充電的方法,已可將產生之壓電電壓儲存在儲電設備當中,提供電能的保存。
Zinc oxide (ZnO), is popular in recent years in various fields of research material, the paper by RF reactive magnetron sputtering system, the growth conditions at room temperature, deposited on commercially available ITO / PET substrate deposition zinc oxide thin films, combined with easy processing and completion of the piezoelectric transducer element; by X-ray diffraction experiments that can be prepared zinc oxide with C-axis (002) prefer orientation in the FE-SEM measurements under that film thickness and deposition rate of the Calculate is about 150nm/HR, changing the thickness of the components of different process parameters under external pressure using a fixed frequency source, to observe its properties on the low-frequency components, to facilitate follow-up in the low-frequency environment collected for the use of pressure into electrical energy. Finished piezoelectric transducer element about 2.5cm2, the piezoelectric layer thickness 2.4μm or more components in the frequency of 1HZ, inlet pressure of 6kg / cm2, open-circuit piezoelectric voltage components on average more than 1.5V, already to commercially available LED lights up, the energy storage part of the piezoelectric layer thickness of 4μm or more components through the use of commercially available button-type Ni-MH rechargeable batteries, electric capacity 40mAH, the pulse charge method, already will produce the piezoelectric voltage electrical equipment were stored in the reservoir, to provide electrical energy saved.