中 文 摘 要 在三五族半導體中,磷化銦鎵是一種極為重要的三元合金半導體材料。由於該種材料有較新的物理特性以及在運用上有很大的潛力,使得它在光電和電子元件的領域上受到相當大的重視。在本研究探討中所採用的磷化銦鎵樣品是由垂直式常壓型的有機金屬氣相沉積法磊晶系統所成長出來的。再藉由光激螢光譜線量測及無接點電場調制反射光譜量測技術來分析磷化銦鎵樣品的光電特性。同時也採用其他已發表之文獻所提供的公式,計算了磷化銦鎵樣品的有序程度。最後,期望所成長的磷化銦鎵材料應該可以應用於光電元件上。
Abstract Semiconductor material GaInP is one of the most important ternary Ⅲ-Ⅴ alloy systems, which has been studied extensively mainly for its novel physical properties and great potential usefulness to use in optoelectric and electric devices. The GaInP sample has grown on GaAs substrate by using vertical atmospheric pressure metalorganic chemical vapor deposition system (vertical AP-MOCVD). The photoluminescence (PL) measurement and contactless electromodulation reflectance(CER) spectrum technique can be used to analysis the optical properties of GaInP sample. Then taking another literatures offered formulas to be evaluated for ordering degree of GaInP sample. Finally, the GaInP material could expect to be applied on many device manufacture fields.