- 期刊
利用電漿增強化學氣相沉積法於可撓式塑膠基材上製備有機／無機多層氣體阻障層結構
An Organic/Inorganic Multilayered Barrier Structure Deposited onto the Flexible Plastic Substrate Using Plasma-enhanced Chemical Vapor Deposition
摘要
本研究利用電漿增強化學氣相沉積法，分別使用四甲基矽烷單體及四甲基矽烷與氧氣混合氣體為源材料，在聚對苯二甲酸乙二醇酯基板上連續沉積有機矽基／氧化矽多層阻障結構。研究結果顯示，藉由調變於聚對苯二甲酸乙二醇酯基板上所沉積的氧化矽薄膜厚度，能優化薄膜矽-氧-矽結構與表面平整性，進而優化其氣體阻障特性。當於氧化矽薄膜與聚對苯二甲酸乙二醇酯基板間沉積一適當厚度之有機矽基薄膜時，能進一步地改善其水氣滲透率。而造成有機矽基／氧化矽阻障結構之水氣滲透特性改善的機制是歸因於有機矽基薄膜能夠釋放存在於阻障結構內之殘留應力，同時亦造成氧化矽薄膜的緻密性及結構品質獲得改善。因此，利用電漿增強化學氣相沉積法並使用相同的單體前驅物，在聚對苯二甲酸乙二醇酯基板上沉積六對有機矽基／氧化矽多層阻障結構時，其水氣滲透率低於1×10^(-2) g/m^2/day，可達到商用水氣滲透率機台的量測極限。
並列摘要
An organosilicon/SiOx multilayered barrier structure was consecutively deposited onto the polyethylene terephthalate (PET) substrate by PECVD using TMS monomer and TMS-oxygen gas mixture, respectively. The thickness of the SiOx film directly deposited onto the PET substrate was firstly designed to perform the best barrier property to water vapor permeation, which also possessed the optimal surface uniformity and Si-O-Si structural order. By insetting an adequate thickness of the organosilicon layer plasma-polymerized from TMS monomer between the SiOx film and PET substrate, the WVTR was further improved. The mechanism responsible for the enhancement of the organosilicon/SiOx barrier structure to water vapor permeation was ascribe to be the inset organosilicon layer was able to release the internal stress resided in the barrier structure, resulting in the improvement on the densification and structural quality of the SiOx barrier film, as observed from the surface morphology observation and determined by the chemical bond configurations. Accordingly, low water vapor permeation below the MOCON detection limit (＜ 1×10^(-2)g/m^2/day) was achievable from the PET substrate coated with the 6-pairs of the organosilicon/SiOx multilayered barrier structure by PECVD using the same monomer precursor.
被引用紀錄
延伸閱讀
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