N型矽基板製程模擬, 指叉式背電極與雙面照光型太陽能電池模擬與分析

Process Simulation of N-type Si wafer, and Analysis of Interdigital Back Contact(IBC) and Bifacial Solar Cells

莊天劭(Tien-Shao Chuang)

指導教授 ： 劉致為

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2012年)

https://doi.org/10.6342/NTU.2012.10472

摘要

矽晶太陽能電池在太陽能產業上依舊佔有大部分的, 其原因主要來自於矽晶太陽能電池的穩定與半導體工業的成熟有很大關係。本論文主要在討論N型矽基板太陽能電池的模擬結果, 根據目前市場上已量產的N型太陽能電池, 像是SunPower的指叉式太陽能電池, 以及Yingli的雙面照光型太陽能電池, 分別進行模擬與分析。
摻雜離子主要是利用離子佈植的方式進行摻雜。接著考慮熱退火條件中, 乾氧對在N型矽基板的硼的影響來做片電阻模擬。再來考慮實際上各種不同的熱退火條件, 與實驗進行較正後, 建立一個模型來預測不同退火條件下的片電阻。
從上所得到經過修正的摻雜離子分佈可以用來進行之後N型太陽能電池的模擬。我們會討論雙面照光型太陽能電池的好處以及設計重點。
最後藉由逆向工程分析, 我們能了解目前 SunPower 的指叉式太陽能電池設計的重點, 以及設計時是如何考慮各個參數, 最後將逆性工程的參數帶進我們的模擬軟體裡進行模擬。

關鍵字

n型矽基 ； 雙面照光型太陽能電池 ； 指叉式太陽能電池

並列摘要

Wafer based silicon solar accounts for a large part in photovoltaic industry is because of the stability of silicon and the mature development in semiconductor industry. In the thesis, the simulation results are based on the N-type silicon based solar cell. According to the solar cells like interdigital back contact (IBC) solar cells by SunPower company and bifacial solar cells by Yingli solar, which both have been in mass production, the simulation and analysis are performed, respectively.
Dopants are implanted by ion plantation. We analyze effects of O2 on the sheet resistance of boron doped region when it is performed thermal oxidation. Later, considering the real activation conditions, we construct a simulation model calibrated with the experimental data to predict the sheet resistance under different activation conditions.
Doping profiles calibrated above can be use to simulate the efficiency of N-type solar cell. We discuss the advantages and design rules for bifacial solar cells.
Finally, by reverse engineering, we obtain the design parameters for the IBC solar cell, and the efficiency of that parameters are simulated by Sentaurus of Synopsys company.

並列關鍵字

n-type based silicon ； bifacial solar cell ； interdigital back contact solar cell

參考文獻

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