矽奈米結構之製作與應用於矽發光元件

隨著積體電路工業快速演進，以矽作為發光源的元件顯得日益重要。本論文即著眼於此一問題，探討以矽作為發光元件所產生的種種問題。矽乃是間接能隙材料，傳統上認為發光不易，且效率低落。在論文中採用多種方法，目的在於提高其發光效率，多種方法的產生主要肇因於載子侷限的效果，使得原本不同動量座標上的電子電洞，有更高的機率在同一動量座標上相遇形成激子。再由激子衰變放光。過去，我們利用金屬-二氧化矽層-矽基結構來達到一維的載子侷限，接著在二氧化矽層上使用二氧化矽奈米粒子來輔助二維平面上的載子侷限。外部量子效率可達到10-5等級。現在，我們同樣可以製造表面奈米結構來達到載子侷限，利用KOH對P型矽與N型矽不同的蝕刻率制作奈米柱狀結構。另外介紹了雷射直接形成奈米壓印(Laser Assisted Direct Imprint, LADI)，並針對利用此法製作出來的奈米結構進行討論。

關鍵字

矽發光元件；奈米結構；載子侷限；氫氧化鉀；二氧化矽奈米粒子

並列摘要

Silicon light emitting devices are more and more important with fast evolutions of the ULSI industry. In this thesis, we will discuss the issue about the problems of taking silicon as a light emitting device. Silicon is a well-known indirect band-gap material, that means it’s very difficult to make the “radiative recombination,” and its light emitting efficiency is much lower than III-V materials. We will take several ways to improve the light emitting efficiency. These ways were resulted from a thought—carrier confinment, that make electrons and holes forms exitons at the beginning. And in the next moment, the exitons meet phonons, it will make the radiative recombinations to emit photons. In the past, we designed the structure of 3D carrier confinment by silica nano-particle modified metal-oxide-semiconductor structure. The external quantum efficiency could exceed 10-5 and upward. Now, we can also fabricate the surface nano-structure for carrier confinement. KOH selectively wet etching is used to fabricate the nano-pillars on silicon substrate. Finally, we introduce the Laser Assisted Direct Imprint (LADI), and discuss the nano-structures fabricated by this process.

並列關鍵字

silicon light emitting device ； nano structure ； carrier confinement ； KOH ； silica nano particle

參考文獻

[8] “矽奈米結構提高矽發光效率之特性與研究”黃礎霆, 國立台灣大學電子所碩士論文, 2006

[11]”矽奈米結構之製作和應用”黃昭仁, 國立台灣大學電子所碩士論文, 2005

[7] “矽基底金氧半發光二極體之研究”林恭安, 國立台灣大學電子所碩士論文, 2006

[13] “矽基底金氧半發光二極體之研究”林恭安, 國立台灣大學電子所碩士論文, 2006

[12]”表面奈米結構對矽發光特性之影響”許書嘉, 國立台灣大學電子所碩士論文, 2006

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矽奈米結構之製作與應用於矽發光元件

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