本篇論文以VLS 機制於低壓化學氣相沈系統中成長矽奈米線(SiNW)。其次,在成長過程中外加電場來達到定位、定向的效果。最後,我們成功利用矽奈米線製備不摻雜和P 型場效電晶體,並量測矽奈米線場效電晶體的各種電性加以比較。
The growth of silicon nanowires (SiNWs) with different diameters of Au nanoparticles as catalyst has been systematically investigated via vapor-liquid-solid (VLS) mechanism using the low pressure chemical vapor deposition. The electric-field-directed growth SiNWs were developed to orient the SiNW to grow in a fixed direction and to the designed position by Coulomb electric force. The SiNWs FET was fabricated successfully. Single crystal undoped and p-type SiNWs have been prepared and characterized by current-voltage measurements.