利用微波電漿束化學氣相沉積法成長類鑽碳與奈米碳管薄膜之電性研究

Electrical Propertirs of Diamond-Like Carbon and Carbon Nanotube Films Deposited by Microwave Plasma Jet Chemical Vapor Deposition System

李俊宏(Jyun-Hong Lee)

指導教授 ： 蘇春熺

國立臺北科技大學/機電學院/製造科技研究所/碩士(2013年)

https://doi.org/10.6841/NTUT.2013.00049

摘要

本研究主要是利用微波電漿束化學氣相沉積(Microwave Plasma Jet Chemical Vapor Deposition, MPJCVD)系統，在甲烷、氮氣以及氫氣的混和反應氣體中，成長奈米碳管(carbon nanotubes, CNTs)與類鑽碳(Diamond-Like-Carbon , DLC)薄膜於矽基材上。製程條件為氣體比例N2：H2：CH4 = 45：135：1、基材底部溫度為521℃、35 torr工作壓力下沉積不同時間以及不同奈米碳管覆蓋面積，觀察微結構、成長機制與薄膜性能。而上述之壓力與溫度並非試片上方條件，不利於製程結果的重現性，所以本研究利用商用軟體Ansys-Workbench，來進行試片附近製程條件的推算，表面溫度約為650℃到724℃之間。
薄膜的表面形貌與膜內特徵是利用掃描式電子顯微鏡以及拉曼光譜來觀察，薄膜性能利用場發射系統、接觸角量測以及網路分析儀來檢測。結果顯示在成長時間為6分鐘具獨立突出的碳管，場發射有最低的起始電場1.233 V/μm。而成長時間為30分鐘的CNTs與carbon nanosheets複合薄膜也有較低的2.5 V/μm，相較於其他學者的單一平面的carbon nanosheets是優異的，且奈米碳管薄膜表面都呈現超疏水角度，電潤濕性能方面，在成長時間為30分鐘的奈米碳管薄膜表面具有最低的4V轉換電壓，以不同覆蓋面積的複合薄膜，在500MHz到3GHz頻段下，電磁屏蔽效應提升2到6 dB。

關鍵字

類鑽碳 ； 奈米碳管 ； 同時成長 ； ANSYS ； 場發射 ； 電潤濕 ； 電磁屏蔽

並列摘要

The objective of this research is using the Microwave Plasma Jet Chemical Vapor Deposition System in the Mixture gas of CH4, N2, and H2 to grow the film of diamond-like carbon (DLC) and carbon nanotubes (CNTs) in the specific area on the silicon wafer simultaneously. Under the fabrication condition which is the gas ratio of N2：H2：CH4 = 45：135：1, the temperature of the bottom wafer of 521℃, and the working pressure of 35 torr, we change the deposition duration time to observe the micro structures and the growth fabrication. However, the pressure and temperature conditions we provided above is not the real situation above our wafer which can't be the indicator of our fabrication results. Our research is trying to use the commercial package Ansys-Workbench to simulate the pressure and temperature distribution around the wafer which can be more representative of the growth environment of fabrication than the tradition conditions.
The surface morphology and microstructure were characterized by scanning electron microscopy (SEM) and Raman spectroscopy. The electrical property and surface property and the electrowetting property of the thin films were measured by field emission system, contact angle measurement. The results showed that the low turn-on voltage of the thin film prepared under growth time of 6 min is 1.233 V/μm and the CNTs/CNWs composite thin films have the turn-on voltage of 2.5 V/μm. Meanwhile, the surface of the as-prepared samples exhibited hydrophobic property. For the electrowetting performance, the lowest electrowetting voltage of 30min growth time is 4V . The electromagnetic shielding effectiveness of the composite thin films with various covering area promotes from 2 dB to 6 dB at frequenccy from 500 MHz to 3 GHz.

並列關鍵字

DLC ； CNTs ； Simultaneous Growth ； ANSYS ； FE ； Electrowetting ； EMI

參考文獻

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