- 學位論文
以微波退火處理改善鍺金氧半電晶體之介面層研究
Improved Interfacial Layer in Ge MOSFETs by Microwave Annealing Treatment
延伸閱讀
- Lee, S. C. (2010). 微波退火對矽材料電性變化之研究 [master's thesis, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2010.00305
- Chen, K. C. (2006). 不同後續退火技術改善矽化鉿金屬氧化層場效電晶體之研究 [master's thesis, National Taipei University of Technology]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0006-2307200711543600
- 陳廷鈞（2015）。以鉿薄膜緩衝層及氧化鋯鉿堆疊改善鍺金氧半電晶體之電特性〔碩士論文，國立清華大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0016-0312201510271320
- Chi, W. C. (2015). A Study on Microwave Thermal Effect for Germanium Channel MOSFETs [master's thesis, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2015.00007
- 許文諺（2018）。Improved Electrical Characteristics of Ge nMOSFET by Gate Stack Engineering〔碩士論文，國立清華大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0016-1803201914470753