銀對氧化鋅薄膜之蕭特基特性研究

本論文以溶膠凝膠法備製氧化鋅薄膜，接著製作氧化鋅的蕭特基二極體。氧化鋅薄膜藉由溶膠凝膠法備製於矽基板上，再經由快速退火爐800℃、45 秒處理獲得。蕭特基二極體則是利用熱蒸鍍沉積銀電極退火並分別以200℃及350℃熱退火處理。藉由電流-電壓量測，當蕭特基二極體經350℃退火時，其能障分別為0.84 eV，理想因子分別為1.74，在逆向偏壓為-3V 時，其漏電流為1.28 mA 及0.12 mA。另外我們也以諾德方程式及Cheung’s 方程式分別探討能障高度及串聯電阻效應。在電流電壓之變溫特性中，蕭特基二極體之能障高度會隨著溫度增加而增加，而理想因子則是隨著溫度增加而下降。且在此藉變溫特性中由高斯分佈之模型，來探討此二極體之能障的不均勻性。

關鍵字

氧化鋅；蕭特基二極體；能障高度

並列摘要

The preparation of sol-gelprocessed zinc oxide (ZnO) thin film and ZnO based Schottky were proposed in the thesis.The ZnO thin film was deposited on Si substrate and annealed by rapid thermal annealing at 800℃ for 45 sec.The electrodes of the Schottky diode was deposited silver by thermal evaporation and then were annealed by RTA at 200 and 350℃, respectively.The Schottky diode shows a barrier height of 0.84 eV with an ideality factor of 1.74 and a reverse leakage current of 0.12 mA after was annealed at 350℃. In addition,the Norde model and Cheung's equation,were also used to discuss the barrier height and series resistance effects.For the temperature dependent current-voltage characteristics, the Schottky diode shows a increase of barrier height and a decrease of ideality factor as the measured temperature increased. The barrier inhomogeneous effect it was also discussed through Gauss distribution model in the temperature dependent effects.

並列關鍵字

Schottky diode ； ZnO ； Barrier height

參考文獻

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銀對氧化鋅薄膜之蕭特基特性研究

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