以微波方式成長銅鋅錫硫薄膜

Study on Copper-zinc-tin-sulfur (CZTS) Thin Films Prepared by Microwave Oven

江博維(Bo-Wei Jiang)

指導教授 ： 雷伯薰

國立虎尾科技大學/電機資訊學院/光電工程系光電與材料科技碩士在職專班/碩士(2016年)

摘要

本論文提出以微波爐方式成長銅鋅錫硫薄膜。我們的做法如下：以氯化銅、氯化鋅、氯化錫、硫脲等水溶液用低管滴在玻璃基板上，送入微波爐成膜，然後再送入爐管退火。此外，我們將針對水溶液中各結晶粉末不同的莫耳數來調製薄膜中的組成比例以形成最佳能隙銅鋅錫硫薄膜。
經本論文研究利用微波爐成長CuZnSnS分兩次700w微波後。再送入快速退火RTA350°C，在濃度比例為2:1:1:4時，XRD有三個無二次鍵結的峰值，0.8M硫脲與0.07M錫的搭配也未出現影響吸收的二次鍵結，在SEM分析可以看出氯化銅0.14M、氯化鋅0.07M、氯化錫0.07M與硫脲0.8M的搭配下可以達成適當的結晶大小，也比較少薄膜孔洞，能隙也能到1.515eV。

關鍵字

微波爐 ； 太陽能電池 ； 銅鋅錫硫 ； 快速熱退火

並列摘要

This paper presents the way to grow in copper-zinc tin sulfur microwave film. Our approach is as follows: copper chloride, zinc chloride, tin chloride, thiourea solution with a low pipe dropped on the glass substrate into the microwave deposition, and then into the annealing furnace tube. In addition, we will focus on an aqueous solution of each of several different crystalline powder modulated mole composition ratio in the film to form the best band gap of copper and zinc tin sulfide film.
After this paper the use of microwaves to grow CuZnSnS points after two 700w microwave. And then into the rapid thermal annealing RTA350 ° C, the concentration ratio of 2: 1: 1: 4, XRD there is no secondary peak three bonded, 0.8M and 0.07M thiourea tin with secondary also does not appear to affect the absorption bonding, can be seen in the SEM analysis can reach the appropriate size of the crystalline copper chloride 0.14M, 0.07M zinc chloride, tin chloride and thiourea 0.07M 0.8M mix film is relatively small holes, but also the energy gap able to 1.515eV.

並列關鍵字

microwave ； solar cells ； copper zinc tin sulfide ； rapid thermal ； annealing

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