5 nm之Ru-(Ta)-B擴散阻障層與銅製程特性

5 nm of Ru-(Ta)-B diffusion barrier layer and copper processing characteristics

李文菁(Wen-Jing Li)

指導教授 ： 方昭訓

國立虎尾科技大學/工程學院/材料科學與綠色能源工程研究所/碩士(2010年)

https://doi.org/10.6827/NFU.2010.00058

摘要

本論文以釕(Ru)靶材使用DC磁控共濺鍍5 nm Ru-B薄膜做為擴散阻障層，接續進行快速退火爐(RTA)30分鐘Ar+H2(5%)氣氛溫度200℃~750℃熱處理，後續分析藉由四點探針(FPP)、X光繞射分析儀(XRD)、掃描式電子顯微鏡(SEM)、歐傑電子能譜儀(AES)、穿透式電子顯微鏡(TEM)等分析薄膜特性。結果顯示，Cu/Ru61.3B38.6/Si薄膜結構有很好的失效溫度640℃，失效的機制在於Cu原子穿過結晶化的擴散阻障層與矽基板反應生Cu3Si。
而共濺鍍5 nm二元Ta-B及三元Ru-Ta-B的擴散阻障層顯示，三元Ru-Ta-B阻障層有較二元Ta-B阻障層有較好的熱穩定性及失效溫度，其中 Ru85.89Ta4.14B9.88薄膜有最佳的失效溫度630℃。針對雙層阻障層濺鍍製備Cu/Ru(2 nm)/B-Ta(3 nm)/Si結構的阻障層，結果顯示，Cu/Ru/Ta48.1B51.8/Si薄膜結構失效溫度達640℃，比三元Ru85.89Ta4.14B9.88薄膜有更高的失效溫度。

關鍵字

釕 ； 鉭 ； 磁控濺鍍 ； 擴散阻障層

並列摘要

Thin films were deposited on Si substrates by magnetron sputtering. 5 nm Ru-B, Ta-B and Ru-Ta-B were prepared on the Si substrate as diffusion barrier, and then the Cu/barrier/Si scheme was annealed in Ar+H2 (5%) and at a temperature between 200℃ and 750℃. The properties of the films were analyzed by four-point probe (FPP), x-ray diffraction (XRD), scanning electron microscopy (SEM), Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). The result show that Cu/Ru61.3B38.6/Si has a failure temperature of 640℃, and the failure is resulted from Cu has penetrated through diffusion barrier to form Cu3Si with Si substrate.
The results also showed that Ru-Ta-B is superior to Ta-B as a barrier, and Ru85.89Ta4.14B9.88 has a failure temperature of 630℃. Bi-layer Ru (2 nm)/B-Ta (3 nm) barrier. The result showed Cu/ Ru/Ta48.1B51.8/Si thin film has a failure temperature of 640℃, which is higher than that of Ru85.89Ta4.14B9.88.

並列關鍵字

Ru-B ； Ta-B ； Ru-Ta-B ； magnetron sputtering ； diffusion barrier

參考文獻

[2] M. A. Nicolet, “Diffusion barrier in thin films”, Thin Solid Films, 52, 415 (1978).

[3] G. Raghavan et. al, “Diffusion of copper through dielectric films under bias temperature stress”, Thin Solid Films, 262, 168 (1995).

[4] A. L. S. Loke, J. T. Wetzel, P. H. Townsend, T. Tanabe, R. N. Vrtis, M. P. Zussman, D. Kumar, C. Ryu and S. S. Wong,“Kinetics of copper drift in low-k polymer interlevel dielectrics”,IEEE Trans. Electron Devices, 46, 2178 (1999).

[5] T. N. Arunagiri, Y. Zhang, O. Chyan, M. J. Kim, and T. Q. Hurd, “Interfacial Diffusion Studies of Cu/(5 nm Ru)/Si Structures”, J. Electrochem. Soc. 152, G808 (2005).

[6] R. Chan, T. N. Arunagiri, Y. Zhang, O. Chyan, R. M. Wallace, M. J. Kim, and T. Q. Hurdc, “Diffusion Studies of Copper on Ruthenium Thin Film”, Electrochem. Solid-State Lett. 7, G154 (2004).