電鍍Cu2O薄膜之表面微觀結構變化之研究

Study on variation of surface microstructure of electrodeposited Cu2O thin films

柯怡君(Yi-Chun Ko)

指導教授 ： 胡毅

大同大學/工程學院/材料工程學系所/碩士(2010年)

摘要

氧化亞銅是一種不昂貴且無毒性之半導體材料,本身為具有
2.1eV 能隙的p 型半導體,且在可見光區吸收係數大等優點,極具太陽
能轉化的潛力,故可應用於太陽能電池以及光觸媒上。本實驗利用電
化學沉積法於不銹鋼基板上鍍製氧化亞銅；透過陰陽離子界面活性劑
當作晶形控制劑，藉以觀察電解溶液(硫酸銅、硝酸銅)在改變電壓及
陰陽離子界面活性劑濃度時，對於氧化亞銅在微觀結構和成相性之變
化。由實驗結果XRD 顯示，陰陽離子界面活性劑(SDS)、(CTAB)會
影響氧化亞銅(111)、(110)平面方向成長。透過SEM 薄膜微觀結構顯
示，不同硫酸銅與硝酸銅溶液隨著陰陽離子界面活性劑濃度的改變將
有四角錐、球狀、花狀、柱狀、正方體不同形態上之變化

關鍵字

氧化亞銅 ； 電化學沉積

並列摘要

Cuprous oxide is an inexpensive and non-toxic semiconductor material
itself has a 2.1eV band gap of the p -type semiconductor , and absorption
in the visible region the advantages of large , highly potential for solar
energy conversion , it can be used in solar cells and photocatalyst on.
In the study, cuprous oxide were fabricated on stainless steel substrate by
electrochemical deposition, with ionic surfactant,Cetyl trimethylammonium
bromide (CTAB) and Sodium lauryl sulfate (SDS) as shape controlled
agent. The influence of additives on crystal morphology of Cu2O was
observed in potential and doping ionic surfactants’ concentration.
The Cetyl trimethylammonium bromide (CTAB) and Sodium lauryl
sulfate (SDS) influenced crystal planes in (111) and (110).The SEM
investigated that the morphology changes are pyramid shape、
s p he r e – l ik e、flower-leaves、columnar shape and cube.

並列關鍵字

Cuprous oxide ； electrochemical deposition

參考文獻

J. Phys., D, Appl. Phys. 40

[2] V. Georgieva and M. Ristov, Sol. Energy Mater. Sol. Cells

(2007), p. 3326

[4] N Ozer,F Tepehan., “Structure and optical properties of

electrochromic copper oxide films prepared by reactive and conventional