微機電系統(MEMS)技術開發之加速度計感測器,因為具有小尺寸、批次生產及整合機械結構與電路成為系統晶片(system on chip)等優勢,所以廣泛運用於消費性產業。使用互補式金屬氧化半導體(CMOS)標準製程平台來製作三軸加速度計感測器,同時整合微機械結構與IC於同一晶片上,簡稱為CMOS MEMS。本研究選擇以標準CMOS導體製程平台作為三軸加速度計感測器的製程開發與設計,在此平台中利用結構補償的觀念有效降低薄膜應力所存在的問題,並且搭配製程上的開發,成功整合出電容式三軸加速度計感測器於單一晶片。 在感測電路部份,主要是使用前置放大器來感測電容的變化,透過實驗量測來驗證感測電路功能。最後,本研究所開發出的三軸加速度計感測器透過實驗量測與分析,可以更進一步的確認CMOS製程對加速度計感測器的可行性,未來更具有商品化的機會。
The standard CMOS process has been extensively applied to fabricate MEMS devices. The major advantage of the CMOS process is the monolithic integration of the IC and MEMS components. This study presents a novel post-CMOS process to realize the integration of in-plane and out-plane fully-differential capacitance sensing accelerometers on a single chip. Thus, the monolithic multi-axes fully differential sensing accelerometer is achieved. In application, the accelerometer has been implemented using CMOS process plus the post-release technique. In circuit part, mainly use the pre-amplifier to detect the capacitance change due to acceleration. Examine through the experiment amount to prove that the function of the pre-amplifier. finally, three axis accelerometer sensor that this research institute develops are examined and analyzed through the experiment amount, can further affirmation CMOS process make to accelerometer sensor feasibility, have a chance commercialized even more in the future.