以陽極氧化鋁技術於氮化銦鎵/氮化鎵量子井上製作奈米孔洞以釋放應變及產生表面電漿子奈米金屬顆粒之製備

Strain Release of InGaN/GaN Quantum Wells through Nano-hole Fabrication and Formation of Metal Particles for Surface Plasmon Study with the Anodic Aluminum Oxide Technique

李立國(Li-Guo Li)

指導教授 ： 楊志忠

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2008年)

https://doi.org/10.6342/NTU.2008.02279

摘要

在本研究中，我們將在氮化鎵基板上或是氮化銦鎵/氮化鎵量子井結構上的鋁層氧化，從而製備陽極氧化鋁。利用這個技術，我們可以製作具有奈米孔洞陣列結構的氧化鋁層當作遮罩。我們以這種遮罩在氮化鎵或是氮化銦鎵/氮化鎵量子井結構上沉積奈米金屬顆粒陣列來研究表面電漿子的特性，或是利用它來對氮化銦鎵/氮化鎵量子井做乾式蝕刻來得到奈米孔洞陣列，以釋放量子井中的應力。
我們的第一個研究是探討氮化鎵材料上，銀和金的的奈米金屬顆粒陣列的表面電漿子特性。我們可以改變陽極氧化鋁的製程參數來調整奈米洞的直徑和間距，所以我們可以控制金屬點的大小和密度。我們觀察到表面電漿子的吸收頻譜，因此獲知不同顆粒大小和密度下，奈米金屬陣列的表面電漿子共振頻率。
第二個研究是關於在氮化銦鎵/氮化鎵量子井結構上製作出奈米孔洞陣列所產生的應力釋放現象。利用陽極氧化鋁，我們在高銦原子含量的氮化銦鎵/氮化鎵量子井結構上製作出奈米孔洞，使得應力可以有效的釋放，並因此而增強其發光強度和降低量子侷限史塔克效應。藉由在量子井上製作大小60奈米，密度每平方公分4.71 x 109 並且深度只有幾奈米的孔洞，我們可以增加內部量子效應三倍左右，量子侷限史塔克效應也可以大約降低2.5倍，若此量子井發光波段在綠光範圍，則其波長會藍移將近15奈米。藉由這種方法，我們有機會經由降低高銦濃度量子井的應力，做出藍移後和其同樣波長的低銦濃度量子井相較，內部量子效率較高，量子侷限史塔克效應較低的結構。

關鍵字

表面電漿子 ； 陽極氧化鋁 ； 應變釋放

並列摘要

In this research, we fabricate anodic alumina oxide (AAO) on GaN and InGaN/GaN quantum well (QW) structure. With the AAO technique, we can fabricate a thin aluminum oxide film with nano-pore array on the nitride structure, which is used as a mask to deposit metal nano-particle arrays on to study the surface plasmon (SP) characteristics, or to release the strain in the QW. Our first study is about the SP characteristics of a silver or gold nano-particle array on GaN template. We change the AAO process condition to control the hole diameter and interpore distance such that we can vary the particle size and density of the metal nano-particle array. We observe the SP absorption spectra and its resonance frequencies of different particle sizes and densities.
The second study is about the strain relaxation phenomenon by fabricating nano-hole array patterns with the AAO technique on an InGaN/GaN QW structure. The effective strain relaxation, leading to the significant enhancement of emission efficiency and reduction of quantum-confined Stark effect (QCSE), in a high-indium InGaN/GaN QW structure via nano-pore fabrication on the sample surface with the anodic aluminum oxide technique is demonstrated. By generating nano-pores of 60 nm in size, 4.71 x 109 cm-2 in pore density, and a depth several nm above the QW, the internal quantum efficiency (IQE) can be increased by about three times and the QCSE is reduced by 2.5 times while the emission spectrum is blue-shifted by 14 nm in the green range. With this approach, it is possible to achieve a higher IQE and a smaller QCSE by relaxing the built-in strain of a higher-indium QW structure and blue-shifting its emission, when compared with a lower-indium sample of the same emission spectrum as the blue-shifted one.

並列關鍵字

surface plasmon ； AAO ； strain release

參考文獻

[1] M. Fleischmann, P. J. Hendra, A. McQuillan, Chem. Phys. Lett. 26, 163 (1974).

[2] C. L. Haynes, and R. P. Van Duyne, J. Phys. Chem. B 107, 7426-7433 (2003).

[8] F. Keller, M. S. Hunter, and D. L. Robinson, J. Electrochem. Soc. 100, 411 (1953).

[9] G. D. Bengough, J. M. Stuart, Brit. Patent 223,994 (1923).

10. M. M. Lohrengel, Mater. Sci. Eng. R11, 243 (1993).