p 型鋰掺雜氧化鋅薄膜製程及電性研究

邱國創

doi:10.6843/NTHU.2013.00125

3.235.108.188，Hello！

Close
Search Quick Search Advanced Search Publication Search	Personal Service Member Login Searching History Use Bonus Card SYMSKAN
Browse Browse by University of Graduate Thesis Browse by Pinyin of Graduate Thesis Browse by Conference Proceedings Topic Browse by Conference Proceedings Publisher Browse by Pinyin of Conference Proceedings Browse by eBook Category Browse by eBook Topic Browse by eBook Publisher
Customer Services Authorize Airiti Recommend a Journal

Search Symbol (Half-width)	Description of Search Symbols
Space	"AND" indicates the intertwining of key terms used in a search
Double Quotation Marks ("") ( " " )	Double quotation marks indicate the beginning and end of a phrase, and the search will only include terms that appear in the same order of those within the quotations. Example: "image process" ： " image process "
?	Indicates a variable letter. Entering two ? will indicate two variable letters, and so on. Example: "Appl?", search results will yield apple, apply… e , appl y … ( (often used to English word searches) )
*	Indicates an unlimited number of variable letters to follow, from 1~n. Example: Enter "appl*", search results will yield apple, apples, apply, applied, application…(often used in English word searches) e , appl es , appl y , appl ied , appl ication … ( (often used to English word searches) )
AND、OR、NOT	Boolean logic combinations of key words is a skill used to expand or refine search parameters. (1) AND (1) AND: Refines search parameters (2) OR (2) OR: Expands search parameters (3) NOT: Excludes irrelevant parameters

DOI stands for Digital Object Identifier （ D igital O bject I dentifier ） ,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.

Using DOI as a persistent link

To create a persistent link, add「http://dx.doi.org/」「 http://dx.doi.org/ 」 before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.

Cite a document with DOI

When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.

DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ）。

Data Source

College of Engineering > Department of Materials Science and Engineering
Engineering > General Engineering

Bibliography Management Tool

Related Links

Report an Issue

Purchase Single Articles

Download PDF

p 型鋰掺雜氧化鋅薄膜製程及電性研究

Fabrication and electrical properties of p-Type Li-doped ZnO Thin Films

邱國創 , Ph.D　　Advisor：簡朝和　　

繁體中文 DOI： 10.6843/NTHU.2013.00125

全始計算方法；軟性化學合成法；氧化鋅；直流脈衝濺鍍法； Vienna abinitio simulation package ； soft chemical routes ； ZnO ； DC Pulsed sputtering

Abstract │ Reference (43) │ Altmetrics

Abstract 〈TOP〉

Parallel Abstract 〈TOP〉

This study mainly focuses on the fabrication and electrical properties of Li-doped ZnO thin film, which includes four parts: I. Feasibility study on application of Vienna abinitio simulation package to the doping effect in p-type ZnO. II. Synthesis of Li-doped ZnO powder by soft chemical routes and the target fabrication. III. Thin film deposition of Li-doped ZnO by DC pulsed sputtering and study on the fabrication parameters. IV. Study of the electrical and optical properties of Li-doped ZnO thin film by impedance measurement.
We first evaluated the feasibility of using the first principle method, namely Vienna abinitio simulation package, to study the doping effect in p-type ZnO by discussing the relationships between dopant and electrical properties or p/n type behavior of the doped ZnO material. With respect to the synthesis of Li-doped ZnO powder and target fabrication, we used solution-based soft chemical routes to obtain high reproducible, homogeneous particles in the size range between 50~100nm. This kind of solution-based synthetic method may generate dynamic-stabilized crystal phase while the solid state reaction route can only synthesize thermodynamic-stabilized crystal structures. It also provides more accurate control over the homogeneity of dopant and the composition design of crystal phase as well as covalent bonding. The Li-doped ZnO powder with 0.05 to 0.8 mole Li doping level was formed and made as a target for further use.         
For fabrication of stable Li-doped ZnO thin film and to understand the effect and control mechanism of fabrication parameters on the electrical and optical properties, we utilized DC pulsed sputtering to deposit Li-doped ZnO thin film, secondary ion mass spectrometry to determine Li element content, and Hall effect instrument to measure the electrical properties and confirm the p/n type behavior. By using 0.2 mole% Li doped ZnO powder, we successfully obtained transparent p-type ZnO thin film at room temperature. The characteristics of this thin film are: film thickness, 573 nm; resistivity, 1.302 (Ω-cm); mobility, 0.94 (cm2/V•s); carrier concentration, 5.08 x 1018 (cm-3); transmittance, 95%. We found the major factors in fabrication process are temperature of substrate, flow rate of Ar carrier gas and sputtering power. As the temperature of substrate or the flow rate of Ar carrier gas increased, the doping concentration of Li decreased and led to a poorer p-type property. However, the higher the sputtering power, the richer the Li doping concentration, which enhances the p-type property.
    We further applied the electrical impedance measurement to the study of Li doping effect. By simulating Li atoms existing in the grain or on the grain boundary with equivalent circuit, the influence of Li dopant on the electrical and optical properties of Li-doped ZnO thin film could be analyzed. Accordingly, the optimal Li dopant content and fabrication parameters for stable Li-doped ZnO thin films were found. In the final part of this study, we demonstrated Li-doped ZnO with Li doping level of 0.1 to 0.3 mole could form stable p-type thin film by characterization with current-voltage I-V curve for p-n junction measurement.

Reference ( 43 ) 〈TOP〉

1. X.H. Wang, B. Yao, Z.Z. Zhang, B.H. Li, Z.P. Wei, D.Z. Shen, Y.M. Lu, and X.W. Fan: “The mechanism of formation and properties of Li-doped p-type ZnO grown by a two-step heat treatment” Semicond. Sci. Technol., 21, 494, (2006).
連結：
2. Y.R. Ryu, S. Zhu, D.C. Look, J.M. Wrobel, H.M. Jeong and H.W. White: “Fabrication of homostructural ZnO p-n junctions” J. Cryst. Growth, 216, 330, (2000).
連結：
3. B. Lin and Z.F. Yunbo Jia, “Green luminescent center in undoped zinc oxide films deposited on silicon substrates”Appl. Phys. Let., 79, 943, (2001).
連結：
4. Y. Yoshino, T. Makino, Y. Katayama and T. Hata: “Optimization of zinc oxide thin film for surface acoustic wave filters by radio frequency sputtering”Vacuum, 59, 538, (2000).
連結：
5. J.B. Lee, H.J. Lee, S.H. Seo and J.S. Park: “Characterization of undoped and Cu-doped ZnO films for surface acoustic wave applications” Thin Solid Films, 398-399, 641, (2000).
連結：

Altmetrics

〈TOP〉

E-mail ：

When an article is available to download, a notice will be sent to your mailbox address.

E-mail ：