灰化製程對鉻及氧化銦錫接觸阻抗之影響

戴謙邦

3.236.231.61，Hello！

Close
Search Quick Search Advanced Search Publication Search	Personal Service Member Login Searching History Use Bonus Card SYMSKAN
Browse Browse by University of Graduate Thesis Browse by Pinyin of Graduate Thesis Browse by Conference Proceedings Topic Browse by Conference Proceedings Publisher Browse by Pinyin of Conference Proceedings Browse by eBook Category Browse by eBook Topic Browse by eBook Publisher
Customer Services Authorize Airiti Recommend a Journal

Search Symbol (Half-width)	Description of Search Symbols
Space	"AND" indicates the intertwining of key terms used in a search
Double Quotation Marks ("") ( " " )	Double quotation marks indicate the beginning and end of a phrase, and the search will only include terms that appear in the same order of those within the quotations. Example: "image process" ： " image process "
?	Indicates a variable letter. Entering two ? will indicate two variable letters, and so on. Example: "Appl?", search results will yield apple, apply… e , appl y … ( (often used to English word searches) )
*	Indicates an unlimited number of variable letters to follow, from 1~n. Example: Enter "appl*", search results will yield apple, apples, apply, applied, application…(often used in English word searches) e , appl es , appl y , appl ied , appl ication … ( (often used to English word searches) )
AND、OR、NOT	Boolean logic combinations of key words is a skill used to expand or refine search parameters. (1) AND (1) AND: Refines search parameters (2) OR (2) OR: Expands search parameters (3) NOT: Excludes irrelevant parameters

DOI stands for Digital Object Identifier （ D igital O bject I dentifier ） ,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.

Using DOI as a persistent link

To create a persistent link, add「http://dx.doi.org/」「 http://dx.doi.org/ 」 before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.

Cite a document with DOI

When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.

DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ）。

Data Source

College of Engineering > In-service Master's Program, Department of Mechanical Engineering
Engineering > Mechanical Engineering

Bibliography Management Tool

Related Links

Report an Issue

Search in Library

There is no full-text available at the moment. Airiti would like to request author's authorization. I would like to provide authorization.

灰化製程對鉻及氧化銦錫接觸阻抗之影響

Ashing process of chromium and indium-tin oxide contact impedance

戴謙邦 , Masters　　Advisor：陳奇夆　　

繁體中文

接觸阻抗；灰化製程；乾蝕刻； ashing process ； the contact resistance ； Dry etching

Abstract │ Reference (29) │ Altmetrics

Abstract 〈TOP〉

Parallel Abstract 〈TOP〉

This paper is to study Thin Film Transistor - Liquid Crystal Display, dry
etching process to produce the compounds, chromium and indium tin
oxide contact resistance can cause abnormal. Depending on the Six
Sigma management practices based on chromium and indium tin oxide
contact impedance exception of the root due to find out through
systematic improvement process, dry etching process by adding ashing
process to remove the target compounds to reduce chromium and indium
tin oxide contact resistance. Dry etching equipment, the use of oxygen
gas plasma pressure through the adjustment of oxygen gas flow, vacuum
system, vacuum system, RF generator which can generate power , the
process time 4 factor and chromium and indium-tin oxide contact with the
impedance effect of oxygen gas flow, vacuum system pressure , Taguchi
experiment to find out the vacuum system, RF generator optimization of
the four factors of the power , the process time . Effectively reduce the
contact resistance of chromium and indium-tin oxide 15%

Reference ( 29 ) 〈TOP〉

4、葉錦龍，干涉型光罩造成局部光阻厚度不一的研究及其應用，中原大學，碩士論文
連結：
5、王俊偉，以生產管理面探討TFT-LCD 件廠規劃之研究，中原大學，碩士論文
連結：
10、Seungjin Choi, Jinhui Cho, Kyu-yong Han, J. H. Jang, J. G. Park, H.J. Yoon, B. N. Yoon , S. H. Ihm, and Young Jin Lim, NovelFour-Mask Process in the FFS TFT-LCD with Optimum Multiple-SlitDesign Applied by the use of a Gray-Tone Mask, SID 05 DIGEST；2005, P-16, p284-p287
連結：
D. Van Nostrand Company. 1891
連結：
27、Jay Arthur, Six Sigma Simplified, LifeStar, 2001
連結：

Altmetrics

〈TOP〉

E-mail ：

When an article is available to download, a notice will be sent to your mailbox address.

E-mail ：