灰化製程對鉻及氧化銦錫接觸阻抗之影響

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College of Engineering > In-service Master's Program, Department of Mechanical Engineering
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灰化製程對鉻及氧化銦錫接觸阻抗之影響

Ashing process of chromium and indium-tin oxide contact impedance

戴謙邦 , Masters　　Advisor：陳奇夆　　

繁體中文

接觸阻抗；灰化製程；乾蝕刻； ashing process ； the contact resistance ； Dry etching

Abstract │ Reference (29) │ Altmetrics

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This paper is to study Thin Film Transistor - Liquid Crystal Display, dry
etching process to produce the compounds, chromium and indium tin
oxide contact resistance can cause abnormal. Depending on the Six
Sigma management practices based on chromium and indium tin oxide
contact impedance exception of the root due to find out through
systematic improvement process, dry etching process by adding ashing
process to remove the target compounds to reduce chromium and indium
tin oxide contact resistance. Dry etching equipment, the use of oxygen
gas plasma pressure through the adjustment of oxygen gas flow, vacuum
system, vacuum system, RF generator which can generate power , the
process time 4 factor and chromium and indium-tin oxide contact with the
impedance effect of oxygen gas flow, vacuum system pressure , Taguchi
experiment to find out the vacuum system, RF generator optimization of
the four factors of the power , the process time . Effectively reduce the
contact resistance of chromium and indium-tin oxide 15%

Reference ( 29 ) 〈TOP〉

4、葉錦龍，干涉型光罩造成局部光阻厚度不一的研究及其應用，中原大學，碩士論文
連結：
5、王俊偉，以生產管理面探討TFT-LCD 件廠規劃之研究，中原大學，碩士論文
連結：
10、Seungjin Choi, Jinhui Cho, Kyu-yong Han, J. H. Jang, J. G. Park, H.J. Yoon, B. N. Yoon , S. H. Ihm, and Young Jin Lim, NovelFour-Mask Process in the FFS TFT-LCD with Optimum Multiple-SlitDesign Applied by the use of a Gray-Tone Mask, SID 05 DIGEST；2005, P-16, p284-p287
連結：
D. Van Nostrand Company. 1891
連結：
27、Jay Arthur, Six Sigma Simplified, LifeStar, 2001
連結：

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