於藍寶石基板濺鍍摻銻氧化鋅薄膜之研究

The Study of Sb-doped ZnO Thin Films On Sapphire by Sputtering

李卓勛(Cho-Hsun Li)

指導教授 ： 王耀德

國立臺北科技大學/機電學院/光電工程系所/碩士(2011年)

摘要

本研究使用RF磁控濺鍍系統在c-plane Sapphire基板上備製摻銻氧化鋅(以下簡稱SZO)薄膜，以探討SZO薄膜之晶體結構、導電特性、表面形貌。晶體結構以X-Ray繞射儀量測、導電特性以霍爾量測儀來分析、表面形貌則以SEM觀察。
實驗中先調整氧化鋅製程參數，發現在基板溫度600℃、製程壓力10mTorr、濺鍍功率40W、沉積時間45分鐘與濺鍍距離5cm下氧化鋅會有最佳化的C軸(002)面優選取向的薄膜形成。
以最佳化的製程參數進行摻銻氧化鋅薄膜備製，經由XRD分析與霍爾量測，發現隨著摻雜比例提高，(002)峰值所對應的角度會往小角度偏移，說明銻離子取代了鋅離子形成SZO薄膜，當摻雜比為1at%時，SZO薄膜形成p型半導體，其電阻率為3.5(Ω-cm)、遷移率5.23(cm2/V-s)、載子濃度3.4×1017(cm-3)。
在低溫製程中，150℃即可成功的製作出p-type氧化鋅薄膜。同時在摻雜濃度1.2at%、製程溫度300℃時，p-type SZO薄膜即有良好的導電性，其電阻率為2.99(Ω-cm)、遷移率2.55(cm2/V-s)、載子濃度4.53×1017(cm-3)。

關鍵字

銻摻雜 ； 氧化鋅 ； 磁控濺鍍

並列摘要

In this study, Sb-doped Zinc Oxide (SZO) films on the Sapphire were prepared by RF magnetron sputtering system. We measured the crystal structure、electronic properties and the surface morphology of the thin films by X-ray diffraction, Hall Effect measurement and SEM(Scanning Electron Microscope).
The processing parameters were optimized according to the crystalline guality of as-sintered undoped ZnO films. We found that ZnO films had good crystallinity on the c-axis orientation at substrate temperature of 600 ℃,working pressure of 10mTorr, sputtering power of 40W , and deposition time of 45 minutes .
(002)-peaks shift toward lower angles with increase of Sb doping concertrations due to the substitution of zinc sites by Sb atoms. When Sb concentration was 1at%, SZO films turned to p-type semiconductor. It had a resistivity of 3.5(Ω-cm), mobility of 5.23(cm2/Vs) and carrier concentration of 3.4×1017 (cm-3).
We found the p-type SZO films can also be obtained at 150℃ low-temperature deposition condition. A good quality of 1.2at% Sb doped p-type SZO film with resistivity of 2.99 (Ω-cm), mobility of 2.55 (cm2/Vs), and carrier concentration of 4.53 × 1017 (cm-3) was deposited at temperature of 300℃.

並列關鍵字

Sb-doped ； ZnO ； Sputtering

參考文獻

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