紫外光增強型氧化鋅-矽結構之全光譜光檢測二極體的研製

ZnO UV-enhanced Photodiodes

潘俊男(Chun-Nan Pan)

指導教授 ： 陳隆建

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2007年)

摘要

為了增強光檢測二極體在紫外/藍光區域間的響應度，本研究使用p-ZnO/n-Si之異質結構的感光二極體，使用超音波噴霧熱解法以氮-銦共同摻雜出p-type之氧化鋅薄膜，將它沉積在(100)方向之矽基板。在逆向偏壓1伏特其光電流為 安培，暗電流為 安培；由此可看出光電流與暗電流相差了兩個級數的大小。在氧化鋅與矽之間製作一層薄氧化層，製作P-N與P-O-N兩種結構之元件。當入射光為530 nm，外加逆向偏壓為1伏特，P-N結構之響應度與量子效率分別為0.204 A/W 、47.73%，入射光為850 nm，光響應度與量子效率分別為0.209 A/W 、30.49%；當入射光為410 nm，外加逆向偏壓為1伏特，P-O-N結構之響應度與量子效率分別為0.225 A/W 、68.05%，入射光為530 nm，光響應度與量子效率分別為0.252 A/W 、58.96%，入射光為850 nm，光響應度與量子效率分別為0.297 A/W 、43.33%。

關鍵字

氧化鋅 ； 超音波熱解法 ； 光檢測二極體

並列摘要

ZnO ultraviolet (UV)/visible photodiodes were fabricated. The N-In codoped p-type ZnO films were deposited on (100)-oriented silicon substrate by ultrasonic spraying pyrolysis method. It was found the photocurrent approximately 3.9×10-7 A at a bias of 1 V and a photocurrent to dark current contrast ratio higher than around two orders of magnitude. The P-N structure photodiodes exhibited two higher responsive regions denoted as A and B, respectively. In the region A, the values of responsivity and QE at 530 nm at biases of 1 V were 0.204 A/W and 47.73%, respectively. In the region B, the values of responsivity and QE at 850 nm at biases of 1 V were 0.3135 A/W and 45.73%, respectively. The P-O-N structure photodiodes exhibited two higher responsive regions denoted as C, D and E, respectively. In the region C, the values of responsivity and QE at 410 nm at biases of 1 V were 0.225 A/W and 68.05%, respectively. In the region D, the values of responsivity and QE at 530 nm at biases of 1 V were 0.252 A/W and 58.96%, respectively. In the region E, the values of responsivity and QE at 850 nm at biases of 1 V were 0.297 A/W and 43.33%, respectively.

並列關鍵字

ZnO ； Spraying Pyrolysis Method ； Photodiodes

參考文獻

[1] Y. A. Goldberg, Semicond. Sci. Technol. 14(1999) R41.

[4] L. S. Yeh, M. L. Lee, J. K. Sheu, M. G. Chen, C. J. Kao, G. C. Chi, S. J. Chang, Y. K. Su, Solid-State Electronics. 47(2003) 873.

[7] S.J. Young, L. W. Ji, T. H. Fang, S. J. Chang, Y. K. Su, X. L. Du, Acta Materialia 55 (2007)329–333.

[8] X. H. Zhang, S. J. Chua, A. M. Yong, H. Y. Yang, S. P. Lau, S. F. Yu, X. W. Sun, L. Miao, M. Tanemura, S. Tanemura, Appl. Phys. Lett. 90 (2007) 013107.

[9] Y. Danhara, T. Hirai, Y. Harada, N. Ohno, Phys. Stat. Sol. (c) 3 (2006) 3565.