以噴霧熱解法成長p-type氧化鋅薄膜之研究

The Study of Spray-deposited p-type ZnO Thin Films

李道惟(Tao-Wei Li)

指導教授 ： 王耀德

國立臺北科技大學/機電學院/光電工程系所/碩士(2006年)

摘要

本論文以噴霧熱解法成長p-type 氧化鋅薄膜，研究主要分為兩大方向：(一)探討共同摻雜與單一摻雜間的差異；(二)對單一摻雜作熱退火處理，改變退火氣體與溫度，探討導電特性改變之原因。
實驗結果證實了共同摻雜比單一摻雜所需的化學生成能低，當成長溫度在350 ℃ 時導電特性為p-type，電阻率為142 Ω-cm；在成長溫度550℃ 時，有最低電阻率4.66 Ω-cm。至於單一摻雜方式，則需較高之化學生成能，實驗結果發現溫度在610℃ 時導電特性為p-type，電阻率為101.6 Ω-cm。實驗的第二個部分，探討熱退火對單一摻雜的影響，經過熱退火之後，導電特性都變差，間接證實氧化鋅的本質缺陷，較易使原本所摻雜的元素被取代。

關鍵字

噴霧熱解法 ； p-type 氧化鋅

並列摘要

In this thesis, the ultrasonic spray was used to deposit p-type zinc oxide (ZnO) thin films to study doping mechanism. There are two main investigations in our report：(1) study of differences between N single doping and N-In codoping ; and (2) study of the post-annealing in N single doping method to realize the effects of processing atmosphere and annealing temperature on transport properties .
Our results confirmed that codoping needs lower formation energy than single doping does. The sample showed p-type semiconductivity with resistivity of 142 Ω-cm when it grew at 350oC and reached the lowest resistivity of 4.66 Ω-cm as the growth temperature increased to 550oC. For the method of single doping, we obtained successfully the p-type ZnO films with resistivity of 101.6 Ω-cm at the growth temperature of 610oC. In the second part of our investigations, the conducting properties of samples all became worse after post-annealing. This result revealed the fact that the p-type dopant was easily replaced by the native defects.

並列關鍵字

Spray Pyrolysis ； p-type ZnO

參考文獻

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