運用雙射極電晶體佈局來設計高操作頻率與高功率功率放大器

High Power Amplifier Design with Double-Emitter Layout at high frequencies

林柏彰(Po-Chang Lin)

指導教授 ： 孫卓勳

國立臺北科技大學/電資學院/電腦與通訊研究所/碩士(2014年)

摘要

在目前的無線通訊產業，隨著電腦與行動裝置的普及化，無線網路硬體的發展已經開始往追求更快的傳輸速度與追求更遠的傳輸距離這兩個大方向在邁進。為符合其無線通訊系統的要求，其電路中的主動元件必須具備有良好的高頻特性及高功率輸出等特性，而Ⅲ-Ⅴ族的微波元件，如異質接面雙極性電晶體及高速電子遷移率電晶體，其特點正符合了無線通訊系統的要求。異質接面雙極性電晶體具有高功率、線性度佳、高截止頻率和低損耗功率等優點，本文是使用宏捷科技所提供的砷化鎵製程所設計的高頻功率放大器電路，目標應用於IEEE802.11b/g/n之高功率的功率放大器，除了探討理論與電路之設計概念，且使用不同的佈局技巧來減少晶片的佈局面積，一方面可以達到高功率放大器需求，另一方面則可以大量節少佈局面積來節省成本。
論文中所設計之高功率功率放大器電路，採用AB類放大器設計。其頻寬皆符合IEEE 802.11b/g/n之相關規範，在2.4~2.5GHz之WiFi 802.11b的應用有32dBm的功率輸出，在WiFi 802.11g/n的應用有28dBm的功率輸出。此外在Femtocell的WCDMA 2110~2170MHz頻段中有26dBm高功率輸出的表現。在Femtocell DCS 1805~1880MHz有24dBm的功率輸出，在Femtocell TD-SCDMA 1880~1920MHz有24dBm的功率輸出，在Femtocell PCS 1930~1990MHz有25dBm的功率輸出，在Femtocell TD-SCDMA 2010~2025MHz有25dBm的功率輸出。為高線性度、高輸出功率與高工作頻寬的功率放大器提出了驗證。

關鍵字

高功率 ； 異質接面雙極性電晶體 ； 砷化鎵 ； 功率放大器

並列摘要

In nowadays Wireless communications industry, the development of WLAN hardware is heading to major ways: “Faster transmission speed and, longer transmission distance”.
There are many versions/ protocols for IEEE 802.11 series standard, such as IEEE 802.11a, IEEE 802.11b, IEEE 802.11g, IEEE 802.11n, and IEEE 802.11ac. In accordance with the requirement of these wireless communications system, the Integrated Circuit (IC) must provide excellent linearity under high-frequency & high output power. Based on this criterion, the elements of Ⅲ-Ⅴgroup’s microwave components, for example, Bipolar HBT and PHEMT just can meet the ideal wireless communications system’s requirement. HBT offers the advantages of high output power, good linearity, high cutoff frequency and low power-consumption. My Thesis adopts GaAs process of AWSC Foundry’s high-frequency power amplifier circuit and aim to the applications of IEEE802.11b/g/n PA. Beside to discover the RF theory and circuit design concept, I also use diversified layout techniques to eliminate wafer die-size. By these methods I can achieve of high power-output requirement as well as decrease more layout dimension, thus, save the total cost.
In summary, by this research of my Thesis, my design of high-power PA circuit complies IEEE 802.11b/g/n bandwidth regulation, which can generate 32dBm Pout at 2.4~2.5GHz by WiFi 802.11b modulation or 28dBm Pout by WiFi 802.11g/n modulation. And at Femtocell application, that can get 26dBm Pout at 2110~2170MHz, 24dBm Pout at 1805~1880MHz, 24dBm Pout at 1880~1920MHz, 25dBm Pout at 1930~1990MH, and 25dBm Pout at 2010~2025MHz.

並列關鍵字

High power ； HBT ； GaAs ； power amplifier

參考文獻

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