超薄型三五族太陽能電池之製程開發

在本論文中，我們用磷化銦嘗試製作超薄型三五族太陽能電池，第一種方法是藉由磨薄磷化銦基板的厚度來使晶圓變薄，不過這種方法因為磷化銦晶圓本身十分脆弱，在磨薄的過程中，磨愈薄愈容易碎成碎片，因此有實作上的困難。第二種則是藉由以金屬為媒介的熱壓接合技術，將磊晶磷化銦晶圓接合在一般的磷化銦晶圓，再利用濕蝕刻的選擇性，蝕刻掉磊晶磷化銦晶圓的基板，在此過程中，我們把一種膠黏劑塗抹在需要保護的地方來保護他們不受到蝕刻，而蝕刻完成後只要泡在丙酮溶液便能不留痕跡的去除，因此成功地把一般的磷化銦當作基板，留了很薄的磷化銦磊晶層在上面，並且用了光致發光頻譜來驗證我們的實驗。同時也成功量取到外部量子效率。

關鍵字

太陽能電池；三五族材料；超薄型

並列摘要

In this thesis, we tried to make ultra-thin III-V solar cells by using indium phosphide epitaxial wafer. The first method is thinning the thickness of substrate of wafer by lapping, but this method has practical difficulties. Because the indium phosphide wafer is fragile, it is easy to break into pieces during lapping. Second method is to bond the epitaxial indium phosphide wafer to an indium phosphide base wafer by thermo-compression metal bonding, and then etch the substrate of epitaxial indium phosphide by wet etching. During the process, we apply a protective adhesive during the wet etch. After the etching, acetone solution can be applied to remove this adhesive without leaving traces. Finally a thin-film of indium phosphide-based epitaxial layers can be left on the base wafer. Furthermore, photoluminescence spectrum measurement was used to check the active layer properties after bonding and the external quantum efficiency was taken for these thin-film devices.

並列關鍵字

Solar cell ； III-V material ； Ultra-thin

參考文獻

[1] W. Shockley and H. J. Queisser, "Detailed Balance Limit of Efficiency of p-n Junction Solar Cells," Journal of Applied Physics, vol. 32, pp. 510-519, 1961.