目前半導體工業主要發展瓶頸在於線寬尺寸,因此本研究結合軟性奈米轉印技術、紫外光硬化奈米轉印技術、滾輪式壓印技術,自行開發設計滾輪式奈米壓印設備並搭配紫外光固化技術來達到縮小線寬尺寸的目的。此技術有著流程簡單、製程快速及設備成本低、可於常溫、低壓下進行、大面積製作等等優點。 滾輪式奈米壓印設備與技術開發研究包括:前段的實驗機台開發設計、組立及試機;中段的轉印矽模仁及 PDMS 軟性模具製作;以及後段的滾輪壓印實驗探討,並利用田口品質工程法設計最佳化參數等三階段所組成。 研究中經過直接壓印、反向壓印的嘗試及克服 S1818 光阻塗佈不均的問題之後,找出可以進行成功壓印的模式,再藉由田口品質工程法的分析,找出滾輪壓印實驗的最佳化參數。最終利用自行開發設計滾輪式奈米壓印設備並搭配壓印實驗的最佳化參數,成功在矽晶圓上壓印出面積 25 mm × 25 mm、最小線寬尺寸 781 nm、陣列周期為1.5 um、且結構 深度為 436 nm的圓錐結構圖形。
The major bottleneck in the development of the semiconductor industry is the limitation of linewidth. This study developed a roller nanoimprinting technology to integrate UV exposure, soft mold and roller embossing techniques to achieve a nano lighography. The process of the roller nanoimprinting technology is simple and fast, and can be operated for 2" full wafer imprinting at room temperature with the slight pressing force. Another advantage of the roller imprinting equipment is cost effective. The major studies of this thesis are to design, assembly and testing the roller imprinting equipment, and fabricate silicon and PDMS molds, then finally integrate the roller equipment and PDMS soft mold to do the nanoimprinting process. Both the normal and reversal nanoimprinting were performed successfully after solving photoresist uniformity issue, and the optimal nanoimprinting recipes were obtained through the analysis of the Taguchi method. Finally, Nano cone structures with 436 nm height, 781 nm diameter and 1.5 period were built on a 25 mm × 25 mm silicon wafer.