添加穩定劑對化學銅析鍍的影響

Effect of stabilizing compounds on electroless copper deposition

陳一龍(Yi-Lung Chen)

指導教授 ： 張俊賢

國立臺北科技大學/工程學院/化學工程所/碩士(2006年)

摘要

由於銅金屬具有較低之電阻率、應力裂縫及較好的電性可靠度，加上金屬鑲嵌技術之研發，近年來超大型積體電路（ULSI）之製程漸漸以銅導線來取代過去的鋁合金導線。利用金屬鑲嵌技術製作銅導線之關鍵在於銅金屬填入技術之開發，而化學析鍍銅技術為可應用於銅金屬填入之技術，近年來為發展IC銅導線研發之重點。
本實驗室發展於化學銅鍍液中加入硼酸緩衝溶液，除了可以維持鍍液的pH值之外，還可以有效的提升鍍液的穩定性，但是銅鍍層較粗糙、電阻率也較高。為改善鍍層性質，本論文探討分別添加碘化鉀和1,10-菲繞啉對化學鍍銅鍍層之析鍍速率、表面形態、組成份、電阻之影響。結果發現添加穩定劑碘化鉀及1,10-菲繞啉會使析鍍速率變慢、電阻值隨膜厚增加而降低、表面較平整、結構較緻密.....等。亦利用電化學阻抗光譜（electrochemical impedance spectroscopy, EIS）來研討添加碘化鉀影響化學鍍銅析鍍之機制，並模擬求出以銅為工作電極之電化學電解之等效電子電路圖。

關鍵字

電化學交流阻抗光譜 ； 化學銅析鍍速率 ； 銅鍍層組成份 ； 銅鍍層電阻率 ； 銅鍍層表面型態

並列摘要

Recently copper has been used to replace Al metallization in Ultra Large Scale Integrated (ULSI) technology because of low resistivity and stress-induced voiding. Copper can be deposited by physical vapor deposition, thermal-induced reflow, chemical vapor deposition; electroplating and electroless deposition. Electroless copper deposition can be processed with high speed in mass production. Therefore, Electroless copper deposition would be a potential technology for the manufacture of ULSI.
The main purpose of this research is to investigate the effect of Potassium iodide and 1,10-phenanthrolinethe plating rate, surface morphology, crystal and resistivity of copper deposition. And to study the mechanism principle of additives
electroless copper deposition by the electrochemical impedance spectroscopy(EIS), the double layer capacitance and resistance of the working electrode can be calculated. The equivalent electronic circuit for the electrochemical cell of electroless copper deposition will be obtained by simulation to further understand the effect of additive on electroless copper deposition.
These results show that with addition of Potassium iodide and 1,10-phenanthroline as additive the borate buffered electroless copper plating solutions was stabilized and the plating rate was decreased ,surface morphology of copper deposition was smoothed, the texture coefficient remained the same within experimental error, the size of the crystal was decreased, the resistivity was decreased reduce when thinkness of fimle increasment Potassium iodide in plating solution. The charge transfer resistance and double layer capacitance of the working electrode were increased.

並列關鍵字

Electrochemical Impedance Spectroscopy (EIS) ； Electroless Copper plating ； Chemical Composition ； Resistivity ； Surface Morphology

參考文獻

[1] H. Narcus, Metal Finishing 45 (1947)

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[3] A.E. Cahill, American Electrochemical Society Proceedings 44(1957) p130.

[5] Aina Hung, "Electroless Copper Deposition with Hypophosphite as Reducing Agent," Plating and Surface Finishing,Vol.75, No.1, pp.62-65, 1988

[6] H. Oita, M. Matsuoka and C. Iwakura, "Deposition rate and morphology of electroless copper film from solutions containing 2,2'-dipyridyl," Electrochimica Acta, vol. 42, no. 9, (1997), pp. 1435-1400.