感測技術的進步帶動了各項科學、軍事、醫療、環境工程往更精細的領域邁進;因此,在光電、資訊、航太、生物、材料、化學、半導體、精密機械、醫療業等重要前瞻科技之領域中,感測技術之開發與其應用技術之發展已成為各先進國家競相發展的項目之一。 現今的表面聲波元件已被廣泛地應用在各通訊系統領域中,作為頻率選取與雜訊抑制的濾波器元件。在感測器應用方面則是利用其質量負載效應,在表面聲波元件表面上所塗佈之聚合薄膜可作為化學氣體辨識感測器,並廣泛地運用在不同之有機氣體感測;本實驗利用五種高分子薄膜PIP(poly isoprene)、PS(poly styrene)、OV25(phenylmethyl siloxane-Diphenyl siloxane copolymer、25% methyl、 75% phenyl)、 PECH(poly epichlorohydrin)、NBR(poly acrylonitrile-co-butadiene、30~35% acrylonitrile)對三種不同濃度的苯、酒精進行感測;探討不同薄膜對不同氣體的吸附差異性,整合多重感測薄膜以便達到多重氣體之感測與更高的感測靈敏度。 表面聲波振盪器實現方面,本論文利用皮爾斯電路架構實現雙埠表面聲波振盪器。所使用表面聲波元件之中心頻率為157.6MHz,插入損耗為-19.86dB。利用巴克豪森法則所設計出的表面聲波振盪器其振盪頻率與輸出功率分別為157.3220MHz與11.19dBm,其相位雜訊約為-82dBc/Hz@100KHz。在感測電路積體化方面則利用TSMC 035um 製程,以CMOS放大電路實現表面聲波振盪器,其振盪頻率為157.6830MHz、功率輸出2.36dBm、相位雜訊約為-73dBc/Hz@100KHz。實現表面聲波感測器積體化之原型。
Detected technology has been already used in advanced science and technology extensively, including optical sciences, information, aviation, semiconductor, medical treatment. It is extensive application in the world, and as the important key to the technology of supporting development in Hi-Tech. So, detected technology has become the major development direction in the advanced countries. Surface acoustic wave (SAW) devices have been used as filters in modern communication systems. In addition, Quartz SAW device using Surface acoustic wave modes have been the most extensively used in Mass sensing devices. SAW devices coated with polymer as chemical Sensors become popular in the detection of a variety of organic gases. We used five-polymer thin film PIP(poly isoprene), PS(poly styrene), OV25(phenylmethyl siloxane-Diphenyl siloxane copolymer, 25% methyl, 75% phenyl), PECH(poly epichlorohydrin), NBR(poly acrylonitrile-co-butadiene, 30~35% acrylonitrile) in sensing three different concentrations Benzene and Ethanol gas. Our purposes are try to realize the difference in gas absorbing of different polymer thin film, and organized the whole gas sensing system in multi-gas sensing experiments. The thesis presents a Pierce-type oscillator using two-port SAW devices. The center frequency and insertion loss of SAW device are 157.6MHz and -19.86dB respectively. The output frequency and power of oscillator is 157.3220MHz and 11.19dBm respectively, while its phase noise is about -82dBc/Hz@100KHz. For the fifth chapter of the thesis, the CMOS SAW oscillator was fabricated with TSMC 035um process. The output frequency and power of oscillator using SAW device is 157.6830MHz and 2.36dBm respectively, while its phase noise is about -73dBc@100KHz.