鍺量子點金屬-氧化物-半導體結構之發光特性

矽鍺光電元件具有與矽積體化電路整合的優點，這是因為矽鍺光電元件具有1.3至1.55 um 的波長，它可以提升光纖通訊應用的重要性。隨著各種元件的製程已經相當成熟，如在矽鍺發光元件、調變器和光偵測器等元件製程，這些都將有助於矽光電元件和光電積體電路的研究與發展。本論文中我們製做一個基本的金屬-氧化物-半導體結構的發光元件及具有鍺量子點於氧化層的金屬-氧化層-半導體結構的發光元件，我們可以藉由鍺量子點的發光強度來判別數位信號中的0或1，因此具有鍺量子點之金屬-氧化物-半導體結構的元件可應用於電荷儲存的記憶體，因此它可以應用於光電積體電路上。首先，我們金屬採用鋁、氧化層為二氧化矽與矽半導體，製作成一個基本金氧半結構的元件。製作完成後量測此元件的頻譜，並探討其電流傳輸機制與發光特性。再來，我們於加入鍺量子點於基本金氧半結構中的氧化層裡，這種結構可應用於電荷的儲存，屬於一種非揮發性記憶體( Non-volatile memory )。我們發現若對此結構施加不同的電壓，將有不同極性的電荷會儲存於鍺量子點中，當位於此處的電荷和相異極性的電荷復合，就有可能產生鍺所發出來的光。因此我們提出利用鍺量子點的發光特性來判別0和1。

關鍵字

金屬-氧化物-半導體；鍺量子點

並列摘要

The advantage of the optoelectronic component of silicon germanium is fully compatible with the Si-based microelectronic chips. Because SiGe-based optoelectronic devices can be tailored from 1.3 to 1.55 um, it increases the importance of this material system to fiber communication applications. With the ripe process technology of the several key devices like SiGe-based light emitters, photodetectors, modulators, and waveguides, it also opens the door for Si-based optical and electronic integrated circuits (OEICs). In this thesis we fabricated a device which has the basic MOS structure and we embedded Ge dots in the oxide. This device can be served as a memory that we can distinguish 0 and 1 from the luminescent intensity of Ge dots. Therefore we can integrate this device into OEICs. First, we fabricated the basic metal-oxide-semiconductor and measured the spectrum and I-V curve. We also study the current transport principle and luminescent characteristics. Then, we embedded Ge dots in the oxide layer of the MOS. The dots can be used to store the charges, and this device is non-volatile memory. We found that electrons or holes will be stored in Ge dots by giving positive or negative bias. When we apply the electrons into the dots, the state which we pre-charge holes will be luminescence and the other state will not. So we can use the luminescence of Ge dots to distinguish 0 and 1.

並列關鍵字

MOS ； Ge quantum dot ； tunneling

參考文獻

[1] ”Physics of semiconductor device”,New York:Wiley,1981.

[2] A.M.Cowley and S.M.Sze ,” Surface States and Barrier Height of Metal-Semiconductorsystems”,J.Appl.Phys.36,3212,1965.S.M.Sze.

[6] 呂紹維，”A Study of Metal-Oxide-Semiconductor Structure with Embedded Ge Nanocrystals by Using A Trap Model”國立台灣大學電子工程研究所碩士論文，2005. .

[10] 沈冠源 “Metal-Oxide-Semiconductor Structure with Au Nanocrystals for Charge Storage” 國立台灣大學電子工程研究所碩士論文，2005.

[13] V.Alex,S.Finkbeiner,J.Weber,”Temperature dependence of the indirect energy gap in crystal silicon”J.Appl.Phys.79,6943.

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鍺量子點金屬-氧化物-半導體結構之發光特性

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