透過您的圖書館登入
IP:3.144.244.44
  • 學位論文

應用錫球陣列與覆晶技術之CMOS微磁通閘設計及製作

Design and Fabrication of CMOS Micro-Fluxgate Magnetic Field Sensors with BGA and Flip-Chip Technologies

指導教授 : 呂志誠 鄭振宗
若您是本文的作者,可授權文章由華藝線上圖書館中協助推廣。

摘要


本研究設計並製作運用CMOS製程及BGA錫球覆晶技術之雙磁芯微磁通閘感測器,並分析各種設計條件對元件的影響。覆晶式微磁通閘為先前銲線式微磁通閘的改良,由兩片具有相同感應與激發線圈的CMOS晶片以覆晶形態組成,透過的錫球陣列作上下晶片的電極連接。相較於銲線式微磁通閘,覆晶式微磁通閘具有兩倍的感應線圈的匝數,可達到更高的靈敏度。CMOS晶片的感應線圈及激發線圈採用TSMC 0.35μm 2P4M 製程,晶片整體面積為2.7 mm 2.4 mm,磁芯的製作及晶片貼合採用微影蝕刻及覆晶技術。為充份探討激發條作對覆晶式磁通閘的影響,我們也利用印刷電路板製作大尺度覆晶微磁通閘並測定其特性,證明此種設計可以達到高靈敏度以及低雜訊。經實驗結果證實,在激發頻率50 kHz及激發電流600 mA下,轉移率為593.44 V/T而雜訊可達0.054 nT/√Hz。此感測器設計充分改善本實驗室先前銲線式磁通閘之設計,除了增加其結構之穩定性外,更使感應訊號強度增為兩倍。未來針對設計與製程持續改良,將可實現靈敏且易於製造的微磁通閘感測器。

並列摘要


In this study, we design and fabricate a micro fluxgate magnetic sensor with dual magnetic cores by CMOS process and BGA (Ball Grid Array) flip-chip techniques, and analyze the effect caused by different design. The micro fluxgate fabricated by flip-chip improves from wire-bonding, using two identical chips to complete the whole excitation and be connected by BGA attached to electrode. Compared to wire-bonding type, this new design contains a pick-up coil with double turns ,which can increase the sensitivity. The chips is fabricated by TSMC 0.35 μm 2P4M processes. The overall area of a single chip is 2.7 mm 2.4 mm. We use photo-lithography technique to fabricate the magnetic cores and use flip-chip concept to design the whole structure. In order to discuss more about the influence about the excitation toward the performance, we also use PCB to design a micro fluxgate with larger scale to verify the feasibility of the flip-chip concept and found that this design has a higher sensitivity and lower noise. In 50 kHz excitation frequency, and excitation current is 600 mA, the transfer coefficient is 593.44 V/T and the noise is 0.054 nT/√Hz. In this new design we improve the previous wire-bonding structure, enhance the stability and double the pick-up signal. In the future, the design and fabrication processes can be improved consistently to realize a sensitive and easy-to-fabricate micro fluxgate sensor.

並列關鍵字

Fluxgate Magnetic Sensors CMOS Flip-chip BGA

參考文獻


[28] 趙方毓,CMOS覆晶式微磁通閘磁量計之設計與製程研究,碩士論文,國立台北科技大學機電整合研究所,台北,2012。
[26] 陳亭宏,CMOS-MEMS平面磁通閘磁量計之薄膜磁芯特性研究,碩士論文,國立台北科技大學機電整合研究所,台北,2009。
[24] 鄧旭軒. "以射頻磁控濺鍍法鍍製 P 型和 N 型微晶矽薄膜之研究." 中央大學光電科學研究所學位論文 2008 年 (2008): 1-58.
[27] 劉育廷,應用銲線與覆晶後製程之CMOS微磁通閘製作與特性分析,碩士論文,國立台北科技大學機電整合研究所,台北,2011。
[17] 黃文聖,新型CMOS-MEMS微磁通閘設計與特性量測,碩士論文,國立台北科技大學機電整合研究所,台北,2010。

被引用紀錄


黃捷(2014)。平面式三軸磁通閘磁場感測器之設計與分析〔碩士論文,國立臺北科技大學〕。華藝線上圖書館。https://doi.org/10.6841/NTUT.2014.00472

延伸閱讀