氧化銦錫薄膜之性質檢測和製程分析

本研究使用共析出法及溶劑熱法成功製備摻雜鎢、釔、鎵與銫之氧化銦錫粉末，摻雜濃度分別為4at%、6at%及8at%，並探討摻雜元素及含量對粉體光學及電學性質影響。由XRD繞射分析知摻雜元素不會改變氧化銦錫晶體結構。由全光譜儀分析知，摻雜釔離子會增加其能隙，呈現出藍移的趨勢，摻雜鎵與銫離子會降低其能隙，呈現出紅移的趨勢。由霍爾電壓分析知，載子濃度隨摻雜量提升而上升，遷移率則是相反；摻雜釔及鎵離子對導電率沒有明顯影響。

關鍵字

氧化銦錫；摻雜；穿透率；電阻係數

並列摘要

The present study has been successful synthesized the W, Y, Ga and Cs -doped ITO powders by the co-precipitation process and the solvothermal process, and the doping concentration are 4at%, 6at%, and 8at%. The effects of doped-elements and content on the optical and electricity properties of ITO powders were investigated. By XRD diffraction analysis, we know that the doped-elements would not change the crystal structure of indium tin oxide. The band-gap energy of Y -doped ITO powders tended to increase and the spectrums appeared the trends of blue-shifted by UV-Visible-NIR spectrophotometer, but the band-gap energy of Ga and Cs -doped ITO powders tended to decrease and then the spectrums appeared the trends of red-shifted. With the increment of the doping concentration, the carrier concentration increased and the mobility decreased. The Y and Ga -doped ITO powders have no significant effect on the conductivity.

並列關鍵字

doping ； indium tin oxide ； Transmittance ； Resistivity

參考文獻

[1]尹瑞蓮,摻雜離子對ITO光學性質的影響,淡江大學,2012.

[5] 洪文進,以溶凝膠法參混乙醯丙酮製備ITO透明導電膜及表面分析,國立臺北科技大學,2005.

[21]洪文進許登貴萬明安郭書瑋蘇昭瑾,ITO透明導電薄膜：從發展與應用到製備與分析,台北科技大學有機高分子研究所

[28]李宗翰,ITO粉末的分散行為研究,淡江大學,2012

[30]陳思宏,真空燒結與熱均壓製程對鉻銅合金靶材微結構及其性質之影響,國立台北科技大學,2011

國際替代計量

氧化銦錫薄膜之性質檢測和製程分析

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