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  • 學位論文

縮短TFT-LCD三代廠配向製程加工時間與靜電抑制之探討

Evaluation of Shortening the Tact Time and Suppressing the Static Electricity Produced in the Rubbing Process of 3G TFT-LCD Panel Manufacturing

指導教授 : 王仲淳
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摘要


在配向製程(Rubbing Process)中所生成的靜電是在第3代(3G,玻璃尺寸:550*670mm)薄膜液晶顯示器(TFT-LCD)面板廠的面板組裝(Cell)製程設備中所衍生的副效應之一。雖然目前靜電的問題已經可以由電路設計及加裝除靜電裝置等等來克服,但隨著產業間競爭的日趨激烈,對於如何提高產能、降低靜電的生成一直是產業間致力開發與研究的方向。 本論文主要探討如何縮短在Cell段配向製程中玻璃基板加工時間(Tact Time)及如何抑制靜電生成。首先,透過配向加工平台(Stage)升降桿(頂Pin)的動作參數之變更與設定來提昇加工速度,達到縮短加工時間及控管靜電值的目標。最佳升降桿動作參數組合的實際效能,可縮短加工時間(Tact Time)達2 sec而且達到配向製程Tact Time 40 sec的目標,最大靜電値更可控制在-2 Kv以內(規範-5 Kv以下)。再者,在抑制靜電生成的研究上,可經由控管配向製程時之溼度來降低製程中所產生之靜電值。當加濕器裝置設定於溼度70%時,靜電値幾乎達-1 Kv以下,即使以最短加工時間條件測試亦可在-3 Kv以下。

關鍵字

液晶顯示器 配向 靜電 溼度

並列摘要


The static electricity generated during the rubbing process is one of the serious side effects in the cell manufacture process of 3G TFT-LCD panel manufacturing. Although the static electricity had been overcome by the designed circuit and the antistatic device, however, for the vigorous business competition, raising the productivity and inhibiting the generation of static electricity are two important topics in this arena. In this thesis, we focused on the research of shortening the tact time on glass substrate and suppressing the static electricity generated during the rubbing process. First, by means of optimizing the processing parameters of Lift Pin in the rubbing process stage, the tact time could be shorten and the static electricity could be inhibited as well. In our research, the goal of shortening the tack time to 40 seconds was reached with the optimized combination parameters of Lift Pin (2 seconds was saved.). The maximum static electricity value could be controlled less than -2Kv (The criteria was less than -5Kv.). Second, in the research of inhibiting the static electricity generation during the rubbing process, we found that the static electricity could be reduced by means of controlling the humidity. When the humidity was set at 70%, the static electricity was less than -1Kv. Even the test was implemented with the fastest processing condition, the static electricity could be controlled to less than -3Kv.

參考文獻


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